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PDM4M3120S15M PDF预览

PDM4M3120S15M

更新时间: 2024-02-22 08:37:49
品牌 Logo 应用领域
IXYS 静态存储器
页数 文件大小 规格书
10页 108K
描述
SRAM Module, 1MX32, 15ns, CMOS, SIMM-72

PDM4M3120S15M 数据手册

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PRELIMINARY  
PDM4M3120  
Truth Table  
CS  
OE  
WE  
Mode  
Output  
Power  
1
2
Deselect/  
Power-down  
H
X
X
High-Z  
Standby  
Read  
L
L
L
L
X
H
H
L
DATA  
Active  
Active  
Active  
OUT  
Write  
DATA  
IN  
Deselect  
H
High-Z  
3
Absolute Maximum Ratings(1)  
4
Symbol  
Rating  
Terminal Voltage with Respect to V  
Com’l.  
Ind.  
Unit  
V
–0.5 to +4.6  
–10 to +85  
–55 to +125  
0 to +70  
1.0  
–0.5 to +4.6  
–10 to +85  
–65 to +150  
–40 to +85  
1.0  
V
TERM  
SS  
T
Temperature Under Bias  
Storage Temperature  
Operating Temperature  
Power Dissipation  
°C  
°C  
°C  
W
BIAS  
5
T
STG  
T
A
P
T
6
I
DC Output Current  
50  
50  
mA  
OUT  
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent  
damage to the device.This is a stress rating only and functional operation of the device at these or  
any other conditions above those indicated in the operational sections of this specification is not  
implied. Exposure to absolute maximum rating conditions for extended periods may affect  
reliability.  
7
Recommended DC Operating Conditions  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
9
V
V
Supply Voltage  
3.0  
0
3.3  
0
3.6  
0
V
CC  
Supply Voltage  
V
SS  
Commercial  
Industrial  
Ambient Temperature  
Ambient Temperature  
0
25  
25  
70  
85  
°C  
°C  
10  
11  
12  
–40  
Rev 1.1  
3

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