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P1087 PDF预览

P1087

更新时间: 2024-11-01 22:27:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关小信号场效应晶体管
页数 文件大小 规格书
3页 28K
描述
P-Channel Switch

P1087 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.27
Is Samacsys:N配置:SINGLE
最大漏源导通电阻:150 ΩFET 技术:JUNCTION
最大反馈电容 (Crss):10 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:FET General Purpose Small Signal
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

P1087 数据手册

 浏览型号P1087的Datasheet PDF文件第2页浏览型号P1087的Datasheet PDF文件第3页 
P1087  
P-Channel Switch  
This device is designed for low level analog switching sample and hold  
circuits and chopper stabilized amplifiers.  
Sourced from process 88.  
TO-92  
D S G  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Drain-Gate Voltage  
Gate-Source Voltage  
Forward Gate Current  
- 30  
30  
DG  
GS  
V
I
50  
mA  
°C  
GF  
T , T  
Operating and Storage Junction Temperature Range  
-55 ~ +150  
J
STG  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Gate-Source Breakdown Voltage  
Gate Reverse Current  
Test Condition  
Min.  
Typ.  
Max. Units  
BV  
V
V
= 0V, IG = 1µA  
30  
V
GSS  
GSS  
DS  
GS  
I
= 15V  
2
nA  
nA  
µA  
NA  
µA  
mA  
V
I (off)  
Drain Cutoff Leakage Current  
V
V
= 15V  
= 7V  
10  
0.5  
2
D
DS  
GS  
T = +85°C  
T = +85°C  
I
I
Drain-Gate Leakage Current  
V
= 15V  
DGO  
DG  
= 0  
I
S
0.1  
Zero-Gate Voltage Drain Current  
Gate-Source Cutoff Voltage  
Drain-Source On Voltage  
Drain-Source On Resistance  
Drain-Source On Resistance  
Input Capacitance  
V
V
V
V
V
V
V
= 20V, V = 0V  
5
DSS  
DS  
DS  
GS  
GS  
GS  
DS  
DS  
GS  
V
V
(off)  
(on)  
= 15V, I = 1µA  
5
GS  
D
= 0V, I = 3mA  
0.5  
150  
150  
45  
V
DS  
D
r
r
(on)  
= 0V, I = 1mA  
DS  
D
(on)  
= 0V, I = 0, f = 1kHz  
ds  
D
C
C
= 15V, V = 0V, f = 1MHz  
pF  
pF  
ns  
ns  
ns  
ns  
iss  
rss  
GS  
Reverse Transfer Capacitance  
Trun On Time  
= 0V, V = 7V, f = 1MHz  
10  
GS  
t (on)  
V
V
= -6V  
(off) = +7V  
R = 1.8kΩ  
I (on) = -3mA  
15  
d
DD  
GS  
t
Rise Time  
75  
r
L
t (off)  
Trun Off Time  
25  
d
D
t
Fall Time  
100  
f
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
mW  
mW/°C  
P
Total Device Dissipation  
Derate above 25°C  
350  
2.8  
D
R
R
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
125  
357  
°C/W  
θJC  
θJA  
°C/W  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, November 2002  

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