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NTE326 PDF预览

NTE326

更新时间: 2024-11-11 22:50:55
品牌 Logo 应用领域
NTE 晶体放大器小信号场效应晶体管
页数 文件大小 规格书
2页 24K
描述
Silicon P-Channel JFET Transistor General Purpose AF Amplifier

NTE326 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:0.97Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):2 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:FET General Purpose Small Signal表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NTE326 数据手册

 浏览型号NTE326的Datasheet PDF文件第2页 
NTE326  
Silicon P–Channel JFET Transistor  
General Purpose AF Amplifier  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA  
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +135°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
OFF Characteristics  
Symbol  
Test Conditions  
Min Typ Max  
Unit  
Gate–Source Breakdown Voltage  
Gate Reverse Current  
V
I = 10µA, V = 0  
40  
5
V
nA  
µA  
V
(BR)GSS  
G
DS  
I
V
= 20V, V = 0  
DS  
GSS  
GS  
GS  
V
= 20V, V = 0, T = +100°C  
1
DS  
A
Gate–Source Cutoff Voltage  
Gate–Source Voltage  
V
I = 1µA, V = 15V  
1.0  
0.8  
7.5  
4.5  
GS(off)  
D
DS  
V
GS  
I = 0.2mA, V = 15V  
V
D
DS  
ON Characteristics  
Zero–Gate–Voltage Drain Current  
Small–Signal Characteristics  
Forward Transfer Admittance  
Output Admittance  
I
V
= 15V, V = 0, f = 1kHz  
2
9
mA  
DSS  
DS  
GS  
|y |  
V
DS  
V
DS  
V
DS  
V
DS  
= 15V, V = 0, f = 1kHz  
1500  
5
1
5000  
75  
7
µmho  
µmho  
pF  
fs  
GS  
|y |  
= 15V, V = 0, f = 1kHz  
os  
GS  
Input Capacitance  
C
= 15V, V = 0, f = 1MHz  
GS  
iss  
rss  
Reverse Transfer Capacitance  
Functional Characteristics  
Noise Figure  
C
= 15V, V = 0, f = 1MHz  
2
pF  
GS  
NF  
V
DS  
= 15V, V = 0, R = 1M,  
1.0  
60  
2.5  
dB  
GS  
G
f = 100Hz, BW = 1Hz  
Equivalent Short–Circuit Input Noise  
Voltage  
e
n
V
DS  
= 15V, V = 0, f = 100Hz,  
115  
nV/pHz  
GS  
BW = 1Hz  

NTE326 替代型号

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