5秒后页面跳转
NTE326 PDF预览

NTE326

更新时间: 2024-11-01 22:50:55
品牌 Logo 应用领域
NTE 晶体放大器小信号场效应晶体管
页数 文件大小 规格书
2页 24K
描述
Silicon P-Channel JFET Transistor General Purpose AF Amplifier

NTE326 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:unknownHTS代码:8541.21.00.95
风险等级:0.97Is Samacsys:N
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):2 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-W3元件数量:1
端子数量:3工作模式:DEPLETION MODE
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.31 W认证状态:Not Qualified
子类别:FET General Purpose Small Signal表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

NTE326 数据手册

 浏览型号NTE326的Datasheet PDF文件第2页 
NTE326  
Silicon P–Channel JFET Transistor  
General Purpose AF Amplifier  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V  
Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA  
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +135°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
OFF Characteristics  
Symbol  
Test Conditions  
Min Typ Max  
Unit  
Gate–Source Breakdown Voltage  
Gate Reverse Current  
V
I = 10µA, V = 0  
40  
5
V
nA  
µA  
V
(BR)GSS  
G
DS  
I
V
= 20V, V = 0  
DS  
GSS  
GS  
GS  
V
= 20V, V = 0, T = +100°C  
1
DS  
A
Gate–Source Cutoff Voltage  
Gate–Source Voltage  
V
I = 1µA, V = 15V  
1.0  
0.8  
7.5  
4.5  
GS(off)  
D
DS  
V
GS  
I = 0.2mA, V = 15V  
V
D
DS  
ON Characteristics  
Zero–Gate–Voltage Drain Current  
Small–Signal Characteristics  
Forward Transfer Admittance  
Output Admittance  
I
V
= 15V, V = 0, f = 1kHz  
2
9
mA  
DSS  
DS  
GS  
|y |  
V
DS  
V
DS  
V
DS  
V
DS  
= 15V, V = 0, f = 1kHz  
1500  
5
1
5000  
75  
7
µmho  
µmho  
pF  
fs  
GS  
|y |  
= 15V, V = 0, f = 1kHz  
os  
GS  
Input Capacitance  
C
= 15V, V = 0, f = 1MHz  
GS  
iss  
rss  
Reverse Transfer Capacitance  
Functional Characteristics  
Noise Figure  
C
= 15V, V = 0, f = 1MHz  
2
pF  
GS  
NF  
V
DS  
= 15V, V = 0, R = 1M,  
1.0  
60  
2.5  
dB  
GS  
G
f = 100Hz, BW = 1Hz  
Equivalent Short–Circuit Input Noise  
Voltage  
e
n
V
DS  
= 15V, V = 0, f = 100Hz,  
115  
nV/pHz  
GS  
BW = 1Hz  

NTE326 替代型号

型号 品牌 替代类型 描述 数据表
J270 FAIRCHILD

功能相似

P-Channel Switch
2N3820 FAIRCHILD

功能相似

P-Channel General Purpose Amplifier
P1087 FAIRCHILD

功能相似

P-Channel Switch

与NTE326相关器件

型号 品牌 获取价格 描述 数据表
NTE327 NTE

获取价格

Silicon NPN Transistor Power Amp, Switch
NTE328 NTE

获取价格

Silicon NPN Transistor Power Amp, Switch
NTE329 NTE

获取价格

Silicon NPN Transistor RF Power Amp, CB
NTE330 NTE

获取价格

Germanium PNP Transistor High Power Switch
NTE3300 NTE

获取价格

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3301 NTE

获取价格

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3302 NTE

获取价格

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE3303 NTE

获取价格

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
NTE331 NTE

获取价格

Silicon Complementary Transistors Audio Power Amp, Switch
NTE3310 NTE

获取价格

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch