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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| OM6050SJPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, M |
|
| OM6050SJTPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, M |
|
| OM6051SJ | INFINEON |
获取价格 |
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) |
|
| OM6051SJ1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Met |
|
| OM6051SJT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Met |
|
| OM6051SJV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Met |
|
| OM6052SJ | INFINEON |
获取价格 |
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) |
|
| OM6052SJ1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met |
|
| OM6052SJT | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met |
|
| OM6052SJV | INFINEON |
获取价格 |
Power Field-Effect Transistor, 30A I(D), 500V, 0.16ohm, 1-Element, N-Channel, Silicon, Met |
|
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