Datasheet > OM6054SJT

OM6054SJT

更新时间： 2024-09-17 20:48:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	19K
描述
Power Field-Effect Transistor, 18A I(D), 800V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AA, HERMETIC SEALED, METAL, TO-267, 3 PIN

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OM6054SJT 数据手册

OM6050SJ OM6052SJ OM6054SJ

OM6051SJ OM6053SJ OM6055SJ

HIGH CURRENT MOSFET IN ISOLATED, TO-267

HERMETIC PACKAGE, SIZE 7 DIE, LOW R_DS(on)

High Current, High Voltage 100V Thru 1000V,

Up To 100 Amp N-Channel, Size 7 MOSFETs,

High Energy Capability

FEATURES

• Isolated Hermetic Metal Package

• Size 7 Die, High Energy

• Fast Switching, Low Drive Current

• Ease Of Paralleling For Added Power

• Low R_DS(on)

• Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET

and packaging technology. They are ideally suited for Military requirements where

small size, high performance and high reliability are required, and in applications such

as switching power supplies, motor controls, inverters, choppers, audio amplifiers and

high energy pulse circuits. This series also features avalanche high energy capability

at elevated temperatures.

@ 25°C

MAXIMUM RATINGS

PART NUMBER

V_DS

R_DS(on)

I_D(Continuous)

OM6050SJ

OM6051SJ

OM6052SJ

OM6053SJ

OM6054SJ

OM6055SJ

100 V

200 V

500 V

600 V

800 V

1000 V

.014

.030

.160

.230

.500

.800

100 A

55 A

30 A

25 A

18 A

10 A

3.1

SCHEMATIC

MECHANICAL OUTLINE

.290

.260

.805

.795

.165

.155

.065

.055

.150

.140

.950

.930

.665

.645

.750

.500

.065

.055

.200

.160

.200

.400

TO-267

4 11 R0

3.1 - 105

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