Datasheet > NVD5890N

NVD5890N

更新时间： 2024-11-09 12:36:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	116K
描述
Power MOSFET 40 V, 123 A, Single NâChannel DPAK

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NVD5890N 数据手册

NVD5890N

Power MOSFET

40 V, 123 A, Single N−Channel DPAK

Features

• Low R

to Minimize Conduction Losses

• MSL 1/260°C

DS(on)

http://onsemi.com

• AEC Q101 Qualified and PPAP Capable

• 100% Avalanche Tested

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(BR)DSS

DS(on)

40 V

3.7 mW @ 10 V

123 A

Applications

• Motor Drivers

• Pump Drivers for Automotive Braking, Steering and Other High

Current Systems

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

123

Continuous Drain Cur-

= 25°C

= 85°C

= 25°C

rent (R

)

Power Dissipation

107

)

Steady

State

CASE 369C

DPAK

(Bent Lead)

STYLE 2

Continuous Drain Cur-

rent (R ) (Note 1)

T = 25°C

18.5

4.0

T = 85°C

Power Dissipation

(R ) (Note 1)

T = 25°C

MARKING DIAGRAMS

& PIN ASSIGNMENT

Pulsed Drain Current

t =10ms T = 25°C

400

100

DmaxPkg

Current Limited by Package

T = 25°C

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Drain

Source Current (Body Diode)

Drain to Source dV/dt

100

6.0

dV/dt

V/ns

Single Pulse Drain−to−Source Avalanche En-

240

ergy (V = 32 V, V = 10 V,

Drain

L = 0.3 mH, I

= 40 A, R = 25 W)

L(pk)

Gate Source

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

= Year

= Work Week

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

5890N = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Publication Order Number:

January, 2012 − Rev. 1

NVD5890N/D

12 3 4 5 6 7

中文翻译

下载PDF

与NVD5890N相关器件

型号	品牌	获取价格	描述	数据表
NVD5890NL	ONSEMI	获取价格	Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK
NVD5890NLT4G	ONSEMI	获取价格	功率 MOSFET，40V，123A，3.7 mΩ，单 N 沟道，DPAK，逻辑电平。
NVD5890NT4G	ONSEMI	获取价格	Power MOSFET 40 V, 123 A, Single NâChannel
NVD5890NT4G-VF01	ONSEMI	获取价格	功率 MOSFET，40V，123A，3.7mΩ，单 N 沟道，DPAK
NVD5C434N	ONSEMI	获取价格	Power MOSFET
NVD5C434NT4G	ONSEMI	获取价格	Power MOSFET
NVD5C446NT4G	ONSEMI	获取价格	Single N-Channel Power MOSFET 40V, 101A, 3.5m
NVD5C454NLT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，88A，3.9mΩ
NVD5C454NT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，83A，4.2mΩ
NVD5C460NLT4G	ONSEMI	获取价格	Single N-Channel Power MOSFET, 40V, 73A, 4.6m