Datasheet > NVD5C454NLT4G

NVD5C454NLT4G

更新时间： 2024-09-25 11:15:11

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	232K
描述
单 N 沟道，功率 MOSFET，40V，88A，3.9mΩ

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NVD5C454NLT4G 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	not_compliant	Factory Lead Time：	8 weeks
风险等级：	1.55	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Tin (Sn)
Base Number Matches：	1

NVD5C454NLT4G 数据手册

NVD5C454NL

MOSFET – Power, Single,

N-Channel,

40 V, 3.9 mW, 88 A

Features

• Low R

www.onsemi.com

to Minimize Conduction Losses

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

(BR)DSS

DS(on)

3.9 mW @ 10 V

5.7 mW @ 4.5 V

40 V

88 A

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

DSS

Gate−to−Source Voltage

"20

Continuous Drain Cur-

= 25°C

= 100°C

= 25°C

rent R

(Notes 1 & 3)

Steady

State

Power Dissipation R

(Note 1)

= 100°C

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

T = 100°C

(Notes 1, 2 & 3)

Steady

State

Power Dissipation R

(Notes 1 & 2)

T = 25°C

3.1

1.5

463

T = 100°C

Pulsed Drain Current

T = 25°C, t = 10 ms

DPAK

CASE 369C

STYLE 2

Operating Junction and Storage Temperature

T , T

−55 to

175

°C

stg

Source Current (Body Diode)

MARKING DIAGRAM

& PIN ASSIGNMENT

Single Pulse Drain−to−Source Avalanche

205

Energy (T = 25°C, I

= 8.3 A)

L(pk)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Drain

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Drain

Gate Source

Junction−to−Case (Drain) (Note 1)

2.7

°C/W

= Assembly Location

= Year

= Work Week

Junction−to−Ambient − Steady State (Note 2)

48.4

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

5C454NL = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of

this data sheet.

Publication Order Number:

June, 2019 − Rev. 0

NVD5C454NL/D

12 3 4 5 6 7

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与NVD5C454NLT4G相关器件

型号	品牌	获取价格	描述	数据表
NVD5C454NT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，83A，4.2mΩ
NVD5C460NLT4G	ONSEMI	获取价格	Single N-Channel Power MOSFET, 40V, 73A, 4.6m
NVD5C460NT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，70A，4.9mΩ
NVD5C464NLT4G	ONSEMI	获取价格	Single N-Channel Power MOSFET, 40V, 64A, 5.2m
NVD5C464NT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，59A，5.8mΩ
NVD5C478NLT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，45A，7.7mΩ
NVD5C478NT4G	ONSEMI	获取价格	Single N-Channel Power MOSFET, 40V, 42A, 8.4m
NVD5C486NLT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，24A，16mΩ
NVD5C486NT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，40V，22A，17.9mΩ
NVD5C632NL	ONSEMI	获取价格	Power MOSFET

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