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NVD5890NL

更新时间： 2024-11-09 11:58:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 100K
描述
Power MOSFET 40 V, 3.7 m, 123 A, Single N.Channel DPAK

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NVD5890NL 数据手册

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NVD5890NL  
Product Preview  
Power MOSFET  
40 V, 3.7 mW, 123 A, Single N−Channel  
DPAK  
http://onsemi.com  
Features  
• Low R  
to Minimize Conduction Losses  
• MSL 1 @ 260°C  
DS(on)  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• 100% Avalanche Tested  
3.7 mW @ 10 V  
5.5 mW @ 4.5 V  
40 V  
• AEC Q101 Qualified and PPAP Capable  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
123 A  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
V
DSS  
N−Channel  
G
Gate−to−Source Voltage  
V
"20  
123  
V
GS  
Continuous Drain Cur-  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
A
C
C
C
D
rent (R ) (Notes 1 &  
q
S
JC  
95  
3)  
Power Dissipation  
(R ) (Note 1)  
P
107  
W
A
D
4
q
JC  
Steady  
State  
Continuous Drain Cur-  
rent (R ) (Notes 1, 2,  
T = 25°C  
A
I
24  
18.5  
4.0  
D
2
1
q
JA  
3
T = 85°C  
A
3)  
CASE 369C  
DPAK  
Power Dissipation  
T = 25°C  
A
P
W
D
(R ) (Notes 1 & 2)  
q
JA  
(Bent Lead)  
STYLE 2  
Pulsed Drain Current  
t =10ms T = 25°C  
I
400  
100  
A
A
p
A
DM  
I
DmaxPkg  
Current Limited by Package  
(Note 3)  
T = 25°C  
A
MARKING DIAGRAMS  
& PIN ASSIGNMENT  
Operating Junction and Storage Temperature  
T , T  
J
−55 to  
175  
°C  
stg  
4
Drain  
Source Current (Body Diode)  
I
S
100  
240  
A
Single Pulse Drain−to−Source Avalanche  
E
mJ  
AS  
Energy (V = 10 V, L = 0.3 mH, I  
= 40 A,  
GS  
= 25 W)  
L(pk)  
R
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
2
Drain  
1
3
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Gate Source  
Y
= Year  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
WW  
= Work Week  
5890L = Device Code  
G
2
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
= Pb−Free Package  
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and suty cycle.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 − Rev. P0  
NVD5890NL/D  
 
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