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NUP2301MW6T1/D

更新时间： 2024-01-26 10:15:34
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 90K
描述
Low Capacitance Diode Array for ESD Protection in Two Data Lines

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NUP2301MW6T1/D 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-88包装说明：R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
Factory Lead Time：1 week风险等级：1.35
最小击穿电压：70 V配置：COMPLEX
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
最大正向电压 (VF)：0.715 VJESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：4端子数量：6
最高工作温度：150 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性：UNIDIRECTIONAL认证状态：Not Qualified
最大重复峰值反向电压：70 V最大反向电流：50 µA
反向测试电压：70 V子类别：Other Diodes
表面贴装：YES技术：AVALANCHE
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

NUP2301MW6T1/D 数据手册

 浏览型号NUP2301MW6T1/D的Datasheet PDF文件第2页浏览型号NUP2301MW6T1/D的Datasheet PDF文件第3页浏览型号NUP2301MW6T1/D的Datasheet PDF文件第4页 
NUP2301MW6T1  
Low Capacitance Diode  
Array for ESD Protection in  
Two Data Lines  
NUP2301MW6T1 is a MicroIntegrationdevice designed to  
provide protection for sensitive components from possible harmful  
electrical transients; for example, ESD (electrostatic discharge).  
http://onsemi.com  
Features  
PIN CONFIGURATION  
AND SCHEMATIC  
• Low Capacitance (2.0 pf Maximum Between I/O Lines)  
• Single Package Integration Design  
• Provides ESD Protection for JEDEC Standards JESD22  
V
1
2
6
5
N/C  
I/O  
N
Machine Model = Class C  
I/O  
Human Body Model = Class 3B  
• Protection for IEC61000−4−2 (Level 4)  
8.0 kV (Contact)  
V
3
4
N/C  
P
15 kV (Air)  
• Ensures Data Line Speed and Integrity  
• Fewer Components and Less Board Space  
• Direct the Transient to Either Positive Side or to the Ground  
• Pb−Free Package is Available  
4
MARKING DIAGRAM  
5
6
3
2
1
Applications  
d
68  
SC−88  
CASE 419B  
STYLE 23  
• T1/E1 Secondary IC Protection  
• T3/E3 Secondary IC Protection  
• HDSL, IDSL Secondary IC Protection  
• Video Line Protection  
68 = Specific Device Code  
d
= Date Code  
• Microcontroller Input Protection  
• Base Stations  
2
• I C Bus Protection  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MAXIMUM RATINGS (Each Diode) (T = 25°C unless otherwise noted)  
J
NUP2301MW6T1  
NUP2301MW6T1G  
SC−88  
3000/Tape & Reel  
3000/Tape & Reel  
Rating  
Reverse Voltage  
Symbol  
Value  
70  
Unit  
Vdc  
mAdc  
mAdc  
V
SC−88  
(Pb−Free)  
V
R
Forward Current  
I
200  
500  
70  
F
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
V
RRM  
Average Rectified Forward  
Current (Note 1)  
(Averaged over any 20 ms Period)  
I
715  
mA  
F(AV)  
Repetitive Peak Forward Current  
I
450  
mA  
A
FRM  
Non−Repetitive Peak Forward Current  
I
FSM  
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 S  
2.0  
1.0  
0.5  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 2  
NUP2301MW6T1/D  
 
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