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NUP4060AXV6T1G PDF预览

NUP4060AXV6T1G

更新时间: 2024-11-19 03:19:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 50K
描述
4−Line Transient Voltage Suppressor Array

NUP4060AXV6T1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50Factory Lead Time:1 week
风险等级:1.17其他特性:LOW CAPACITANCE
最大击穿电压:7.2 V最小击穿电压:6.2 V
击穿电压标称值:6.8 V配置:COMPLEX
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:20 W
元件数量:4端子数量:6
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL认证状态:Not Qualified
最大重复峰值反向电压:5 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

NUP4060AXV6T1G 数据手册

 浏览型号NUP4060AXV6T1G的Datasheet PDF文件第2页浏览型号NUP4060AXV6T1G的Datasheet PDF文件第3页浏览型号NUP4060AXV6T1G的Datasheet PDF文件第4页 
NUP4060AXV6  
4−Line Transient Voltage  
Suppressor Array  
This 4−line voltage transient suppressor array is designed for  
application requiring transient voltage protection capability. It is  
intended for use in over−transient voltage and ESD sensitive  
equipment such as cell phones, portables, computers, printers and  
other applications. This device features a common cathode design  
which protects four independent lines in a single SOT−563 package.  
http://onsemi.com  
SOT−563 4−LINE TRANSIENT  
VOLTAGE SUPPRESSOR  
Features  
Protects up to 4 Lines in a Single SOT−563 Package  
PIN ASSIGNMENT  
ESD Rating: IEC61000−4−2: Level 4  
Contact (8 kV), Air (15 kV)  
D
D
GND  
1
2
3
6
5
4
1
2
V Pin = 16 V Protection  
CC  
D1, D2, and D3 Pins = 6.8 V Protection  
D
3
Low Capacitance (< 7 pF @ 3 V) for D , D , and D  
This is a Pb−Free Device  
1
2
3
V
CC  
GND  
Applications  
MARKING  
DIAGRAM  
Hand Held Portable Applications  
USB Interface  
Notebooks, Desktops, Servers  
SIM Card Protection  
SOT−563  
CASE 463A  
STYLE 6  
MT MG  
6
G
1
1
MAXIMUM RATINGS (T = 25°C, unless otherwise specified)  
J
MT = Specific Device Code  
Symbol  
Rating  
Value  
Unit  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
P
1
Peak Power Dissipation  
8x20 msec double exponential waveform,  
(Note 1) D , D , and D  
3
V
Diode  
200  
W
PK  
CC  
20  
W
°C  
°C  
°C  
1
2
ORDERING INFORMATION  
T
J
Operating Junction Temperature Range  
Storage Temperature Range  
−40 to 125  
−55 to 150  
260  
Device  
Package  
Shipping  
T
T
STG  
NUP4060AXV6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
Lead Solder Temperature – Maximum  
(10 seconds)  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
ESD  
IEC 61000−4−2 Air  
IEC 61000−4−2 Contact  
15000  
8000  
V
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse per Figure 1.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 1  
NUP4060/D  
 

NUP4060AXV6T1G 替代型号

型号 品牌 替代类型 描述 数据表
QZX563C6V8C-7 DIODES

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