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NUP4102XV6T1 PDF预览

NUP4102XV6T1

更新时间: 2024-11-23 19:58:59
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管电视
页数 文件大小 规格书
3页 43K
描述
100W, BIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE, PLASTIC, CASE 463A-01, 6 PIN

NUP4102XV6T1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-F6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.68
其他特性:LOW CAPACITANCE最大击穿电压:16 V
最小击穿电压:14 V击穿电压标称值:15 V
配置:COMPLEX二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:100 W元件数量:8
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:12 V
子类别:Transient Suppressors表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NUP4102XV6T1 数据手册

 浏览型号NUP4102XV6T1的Datasheet PDF文件第2页浏览型号NUP4102XV6T1的Datasheet PDF文件第3页 
NUP4102XV6  
6−Pin Bi−Directional Quad  
TVS Array  
This 6−Pin bi−directional transient suppressor array is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in transient voltage and ESD sensitive equipment  
such as computers, printers, cell phones, medical equipment, and other  
applications. Its integrated design provides bi−directional protection  
for four separate lines using a single SOT−563 package. This device is  
ideal for situations where board space is a premium.  
Features  
http://onsemi.com  
6
4
3
1
Bi−directional Protection for Four Lines in a  
2, 5  
Single SOT−563 Package  
Peak Power Dissipation − 75 W (8x20 msec Waveform)  
Low Leakage Current (100 nA @ 12 V)  
Low Capacitance (< 15 pF)  
Provides ESD Protection for JEDEC Standards JESD22  
− Machine Model = Class C  
− Human Body Model = Class 3B  
Provides ESD Protection for IEC 61000−4−2, 15 kV (Air),  
8 kV (Contact)  
Mechanical Characteristics  
SOT−563  
CASE 463A  
PLASTIC  
Void Free, Transfer−Molded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
Applications  
MARKING DIAGRAM  
6 5 4  
RP MG  
G
GSM Handsets and Accessories  
1 2 3  
Other Telephone Sets  
Computers / Printers / Set−Top Boxes  
RP = Device Marking  
M
G
= One Digit Date Code  
= Pb−Free Package  
(Note: Microdot may be in either location)  
MAXIMUM RATINGS (T =25°C, unless otherwise specified)  
J
Rating  
Symbol Value  
Unit  
Peak Power Dissipation  
P
75  
W
PK  
8x20 msec Double Exponential Waveform,  
(Note 1)  
ORDERING INFORMATION  
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to  
125  
°C  
°C  
J
Device  
Package  
Shipping  
NUP4102XV6T1G SOT−563 4000/Tape & Reel  
(Pb−Free)  
T
−55 to  
150  
STG  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Lead Solder Temperature – Maximum (10 sec)  
T
260  
°C  
L
Human Body Model ( HBM)  
Machine Model (MM)  
IEC 61000−4−2 Air (ESD)  
IEC 61000−4−2 Contact (ESD)  
ESD  
16  
0.4  
30  
30  
kV  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Non−repetitive current pulse per Figure 3.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 1  
NUP4102XV6/D  
 

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