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NUP4106DR2G PDF预览

NUP4106DR2G

更新时间: 2024-11-23 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管电视光电二极管局域网
页数 文件大小 规格书
7页 139K
描述
Low Capacitance Surface Mount TVS for High-Speed Data Interfaces

NUP4106DR2G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:1 week风险等级:1.58
最小击穿电压:5 V击穿电压标称值:5 V
最大钳位电压:15 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:500 W
元件数量:1端子数量:8
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL认证状态:Not Qualified
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NUP4106DR2G 数据手册

 浏览型号NUP4106DR2G的Datasheet PDF文件第2页浏览型号NUP4106DR2G的Datasheet PDF文件第3页浏览型号NUP4106DR2G的Datasheet PDF文件第4页浏览型号NUP4106DR2G的Datasheet PDF文件第5页浏览型号NUP4106DR2G的Datasheet PDF文件第6页浏览型号NUP4106DR2G的Datasheet PDF文件第7页 
NUP4106  
Low Capacitance Surface  
Mount TVS for High-Speed  
Data Interfaces  
The NUP4106 transient voltage suppressor is designed to protect  
equipment attached to high speed communication lines from ESD and  
lightning.  
http://onsemi.com  
Features  
SO8 Package  
SO8 LOW CAPACITANCE  
VOLTAGE SUPPRESSOR  
500 WATTS PEAK POWER  
3.3 VOLTS  
Peak Power 500 W 8 x 20 mS  
ESD Rating:  
IEC 6100042 (ESD) 15 kV (air) 8 kV (contact)  
UL Flammability Rating of 94 V0  
PIN CONFIGURATION  
AND SCHEMATIC  
This is a PbFree Device  
Typical Applications  
I/O 1  
REF 1  
REF 1  
I/O 2  
1
2
3
4
8
7
6
5
GND  
I/O 4  
I/O 3  
GND  
High Speed Communication Line Protection  
T1/E1 Secondary Protection  
T3/E3 Secondary Protection  
Analog Video Protection  
Base Stations  
2
I C Bus Protection  
SOIC8  
CASE 751  
PLASTIC  
8
MAXIMUM RATINGS  
1
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation  
P
pk  
500  
W
8 x 20 mS @ T = 25°C (Note 1)  
MARKING DIAGRAM  
A
Junction and Storage Temperature Range T , T  
55 to +150  
°C  
°C  
J
stg  
8
Lead Solder Temperature −  
T
L
260  
P4106  
AYWWG  
G
Maximum 10 Seconds Duration  
IEC 6100042  
Contact  
Air  
ESD  
8
15  
kV  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Nonrepetitive current pulse 8 x 20 mS exponential decay waveform  
Pin 2/3 to Pin 5/8  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NUP4106DR2G  
SO8  
2500/Tape & Reel  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
February, 2009 Rev. 0  
NUP4106/D  
 

NUP4106DR2G 替代型号

型号 品牌 替代类型 描述 数据表
SRDA3.3-4.TBT SEMTECH

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反向截止电压(Vrwm):5V;极性/通道数(Channel):4-Line,Unidir