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NTD4863N--35G

更新时间： 2024-11-09 12:34:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 292K
描述
Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK

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NTD4863N--35G 数据手册

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NTD4863N  
Power MOSFET  
25 V, 49 A, Single N--Channel, DPAK/IPAK  
Features  
• Trench Technology  
• Low RDS(on) to Minimize Conduction Losses  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• These are Pb--Free Devices  
http://onsemi.com  
V
R
MAX  
I
MAX  
D
(BR)DSS  
DS(ON)  
9.3 mΩ @ 10 V  
14 mΩ @ 4.5 V  
25 V  
49 A  
Applications  
• VCORE Applications  
• DC--DC Converters  
• High Side Switching  
D
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
G
Parameter  
Symbol  
Value  
Unit  
Drain--to--Source Voltage  
Gate--to--Source Voltage  
V
25  
V
V
A
DSS  
S
V
±20  
11.3  
N--CHANNEL MOSFET  
GS  
Continuous Drain  
Current R  
I
D
T
= 25°C  
= 85°C  
= 25°C  
A
4
θ
JA  
4
T
A
8.8  
(Note 1)  
Power Dissipation  
(Note 1)  
4
T
A
P
1.95  
W
A
D
R
θ
JA  
2
1
Continuous Drain  
Current R  
ID  
T
A
= 25°C  
= 85°C  
= 25°C  
9.2  
7.1  
1
1
2
3
3
θ
JA  
2
T
A
Steady  
State  
3
(Note 2)  
Power Dissipation  
(Note 2)  
CASE 369AC  
3 IPAK  
(Straight Lead)  
CASE 369AA  
DPAK  
(Bent Lead)  
STYLE 2  
CASE 369D  
IPAK  
(Straight Lead  
DPAK)  
T
A
P
I
1.27  
W
A
D
R
θ
JA  
Continuous Drain  
T
C
T
C
T
C
= 25°C  
= 85°C  
= 25°C  
49  
38  
D
Current R  
(Note 1)  
θ
JC  
MARKING DIAGRAMS  
& PIN ASSIGNMENTS  
Power Dissipation  
(Note 1)  
P
36.6  
W
A
D
R
θ
JC  
4
Pulsed Drain  
Current  
t =10ms  
p
T
A
= 25°C  
= 25°C  
I
DM  
98  
35  
Drain  
4
4
Drain  
Drain  
Current Limited by Package  
T
A
I
A
DmaxPkg  
Operating Junction and Storage  
Temperature  
T ,  
STG  
-- 5 5 t o  
+175  
°C  
J
T
Source Current (Body Diode)  
Drain to Source dV/dt  
I
30.5  
6
A
S
dV/dt  
EAS  
V/ns  
mJ  
2
Single Pulse Drain--to--Source Avalanche  
Energy (T = 25°C, V = 50 V, V = 10 V,  
60.5  
1
2
3
Drain  
1
3
J
DD  
GS  
Gate Drain Source  
Gate Source  
I = 11 A , L = 1.0 mH, R = 25 Ω)  
1
2
3
L
pk  
G
Gate Drain Source  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
260  
°C  
L
Y
WW  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
4863N = Device Code  
= Pb--Free Package  
G
ORDERING INFORMATION  
Seedetailedorderingandshippinginformationinthepackage  
dimensions section on page 6 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
June, 2010 -- Rev. 2  
NTD4863N/D  
12345678

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