Datasheet > NSVF3007SG3

NSVF3007SG3

更新时间： 2024-11-30 01:13:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	491K
描述
RF Transistor

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中文翻译

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NSVF3007SG3 数据手册

NSVF3007SG3

RF Transistor

for Low Noise Amplifier

This RF transistor is designed for low noise amplifier applications. MCPH

package is suitable for use under high temperature environment because it

has superior heat radiation characteristics. This RF transistor is AEC-Q101

qualified and PPAP capable for automotive applications.

www.onsemi.com

12 V, 30 mA

Features

 Low-noise use

 High cut-off frequency : f = 8 GHz typ. (V

 High gain

= 8 GHz typ.

: NF = 1.2 dB typ. (f = 1 GHz)

= 5 V)

RF Transistor

: |S21e|²= 12 dB typ. (f = 1 GHz)

 AEC-Q101 qualified and PPAP capable

 MCPH3 package is pin-compatible with SC-70FL

 Pb-Free, Halogen Free and RoHS compliance

ELECTRICAL CONNECTION

NPN

Typical Applications

 Low Noise Amplifier for FM Radio

 Low Noise Amplifier for RKE

 RF Amplifier for ADAS

1 : Base

2 : Emitter

3 : Collector

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Value

Unit

MARKING

CBO

CEO

EBO

Collector Dissipation

350

MCPH3

Operating Junction and

Storage Temperature

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

Tj, Tstg

55 to +150

C

ORDERING INFORMATION

See detailed ordering and shipping

information on page 10 of this data sheet.

May 2017 - Rev. 0

Publication Order Number :

NSVF3007SG3/D

12 3 4 5 6 7...10

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