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NSV60101DMR6T1G

更新时间： 2024-11-05 11:10:39
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安森美 - ONSEMI /
页数 文件大小 规格书
7页 235K
描述
60 V, 1 A, Low VCE(sat) NPN Transistors in SC-74

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NSV60101DMR6T1G 数据手册

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Low VCE(sat) NPN  
Transistors, 60 V, 1 A  
NSS60101DMR6  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
CE(sat)  
www.onsemi.com  
60 Volt, 1 Amp  
Typical applications are DC−DC converters and LED lightning,  
power management…etc. In the automotive industry they can be used  
in air bag deployment and in the instrument cluster. The high current  
NPN Low V  
Transistors  
CE(sat)  
2
gain allows e PowerEdge devices to be driven directly from PMU’s  
MARKING  
DIAGRAM  
control outputs, and the Linear Gain (Beta) makes them ideal  
components in analog amplifiers.  
SC−74  
CASE 318F  
6
Features  
RAD MG  
1
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
G
RAD= Specific Device Code  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
M
G
= Date Code  
= Pb−Free Package  
Compliant  
(Note: Microdot may be in either location)  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Emitter Voltage  
Symbol  
Max  
60  
80  
6
Unit  
Vdc  
Vdc  
Vdc  
A
PIN CONNECTIONS  
V
CEO  
V
CBO  
V
EBO  
E
B
C
1
2
3
6
5
4
C
B
E
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Collector Current − Peak  
I
C
1
I
2
A
CM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
6
5
1
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance Junction−to−Ambient  
(Notes 1 and 2)  
R
234  
°C/W  
q
JA  
4
3
Total Power Dissipation per Package @  
A
P
0.53  
300  
W
°C/W  
W
D
T = 25°C (Note 2)  
Thermal Resistance Junction−to−Ambient  
(Note 3)  
R
q
ORDERING INFORMATION  
JA  
†
Device  
Package  
Shipping  
Power Dissipation per Transistor @ T = 25°C  
P
D
0.40  
A
(Note 3)  
NSS60101DMR6T1G  
NSS60101DMR6T2G  
NSV60101DMR6T1G  
NSV60101DMR6T2G  
Junction and Storage Temperature Range  
T , T  
J
−55 to  
+150  
°C  
SC−74  
(Pb−Free)  
3000/Tape &  
Reel  
stg  
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Dual Operation).  
2. P per Transistor when both are turned on is one half of Total P or 0.53 Watts.  
D
D
2
3. Per JESD51−7 with 100 mm pad area and 2 oz. Cu (Single−Operation).  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
February, 2020 − Rev. 3  
NSS60101DMR6/D  
 
1234567

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