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NSV60201LT1G PDF预览

NSV60201LT1G

更新时间： 2023-06-19 14:32:06
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管小信号双极晶体管
页数 文件大小 规格书
5页 77K
描述
低饱和压晶体管，NPN，60 V，4.0 A，SOT-23 封装

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中文翻译

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NSV60201LT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：8 weeks风险等级：1.54
最大集电极电流 (IC)：2 A集电极-发射极最大电压：60 V
配置：SINGLE最小直流电流增益 (hFE)：100
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：100 MHz最大关闭时间（toff）：1220 ns
最大开启时间（吨）：155 nsBase Number Matches：1

NSV60201LT1G 数据手册

 浏览型号NSV60201LT1G的Datasheet PDF文件第2页浏览型号NSV60201LT1G的Datasheet PDF文件第3页浏览型号NSV60201LT1G的Datasheet PDF文件第4页浏览型号NSV60201LT1G的Datasheet PDF文件第5页 
NSS60201LT1G  
60 V, 4.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor's e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
http://onsemi.com  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
Typical applications are DC-DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
60 VOLTS, 4.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 70 mW  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU's control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
•ꢀThis is a Pb-Free Device  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
60  
Unit  
Vdc  
Vdc  
Vdc  
A
3
Collector‐Emitter Voltage  
Collector‐Base Voltage  
Emitter‐Base Voltage  
V
CEO  
V
CBO  
V
EBO  
140  
8.0  
2.0  
4.0  
1
2
Collector Current - Continuous  
Collector Current - Peak  
Electrostatic Discharge  
I
C
SOT-23 (TO-236)  
CASE 318  
STYLE 6  
I
A
CM  
ESD  
HBM Class 3B  
MM Class C  
THERMAL CHARACTERISTICS  
Characteristic  
DEVICE MARKING  
Symbol  
Max  
Unit  
VJ MꢀG  
Total Device Dissipation  
T = 25°C  
P
(Note 1)  
460  
mW  
D
G
A
Derate above 25°C  
3.7  
mW/°C  
°C/W  
1
Thermal Resistance,  
Junction-to-Ambient  
R
(Note 1)  
270  
q
JA  
VJ = Specific Device Code  
M
Total Device Dissipation  
T = 25°C  
P
(Note 2)  
(Note 2)  
540  
mW  
D
= Date Code*  
= Pb-Free Package  
A
G
Derate above 25°C  
4.3  
mW/°C  
°C/W  
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction-to-Ambient  
R
230  
q
JA  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
Total Device Dissipation  
(Single Pulse < 10 sec.)  
P
Dsingle  
(Note 3)  
710  
mW  
ORDERING INFORMATION  
Junction and Storage  
Temperature Range  
T , T  
J
-55 to  
+150  
°C  
stg  
†
Device  
Package  
Shipping  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSS60201LT1G  
SOT-23  
(Pb-Free)  
3000/Tape & Reel  
2
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
1. FR-ā4 @ 100 mm , 1 oz. copper traces.  
2
2. FR-ā4 @ 500 mm , 1 oz. copper traces.  
3. Thermal response.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
December, 2007 - Rev. 1  
1
Publication Order Number:  
NSS60201L/D  
 
12345

中文翻译

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NSV60201LT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS60201LT1G ONSEMI

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