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NSV60201SMTWTBG PDF预览

NSV60201SMTWTBG

更新时间： 2023-09-03 20:36:17
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
7页 208K
描述
Single 60V 2A Low VCE(sat) NPN Transistor in WDFN6

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中文翻译

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NSV60201SMTWTBG 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：WDFN-6Reach Compliance Code：compliant
Factory Lead Time：43 weeks 1 day风险等级：5.75
外壳连接：COLLECTOR最大集电极电流 (IC)：2 A
集电极-发射极最大电压：60 V配置：SINGLE
最小直流电流增益 (hFE)：35JESD-30 代码：S-PDSO-N6
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN参考标准：AEC-Q101
表面贴装：YES端子面层：Tin (Sn)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：180 MHz
Base Number Matches：1

NSV60201SMTWTBG 数据手册

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DATA SHEET  
www.onsemi.com  
Low VCE(sat) NPN Transistor  
60 V, 2 A  
60 Volt, 2 Amp  
NPN Low V Transistor  
CE(sat)  
MARKING  
DIAGRAM  
NSS60201SMT  
2
onsemi’s e PowerEdge family of low V  
transistors are  
CE(sat)  
1
2
3
6
5
4
WDFN6  
CASE 506AN  
miniature surface mount devices featuring ultra low saturation voltage  
AQ MG  
G
(V ) and high current gain capability. These are designed for use  
CE(sat)  
1
in low voltage, high speed switching applications where affordable  
efficient energy control is important.  
AQ = Specific Device Code  
M
= Date Code  
Typical applications are DC−DC converters and LED lightning,  
power management…etc. In the automotive industry they can be used  
in air bag deployment and in the instrument cluster. The high current  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
2
gain allows e PowerEdge devices to be driven directly from PMU’s  
control outputs, and the Linear Gain (Beta) makes them ideal  
components in analog amplifiers.  
PIN CONNECTIONS  
6
5
4
1
2
3
Features  
7
8
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
• NSV60201SMTWTBG − Wettable Flanks Device  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
6,7  
1
2
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Emitter Voltage  
Symbol  
Max  
60  
60  
6
Unit  
Vdc  
Vdc  
Vdc  
A
(Pins 3,4,5,8 are not connected)  
V
CEO  
V
CBO  
V
EBO  
Collector−Base Voltage  
Emitter−Base Voltage  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
Collector Current − Continuous  
Collector Current − Peak  
I
C
2
NSS60201SMTTBG  
WDFN6  
(Pb−Free)  
3000/Tape &  
Reel  
I
3
A
CM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NSV60201SMTWTBG  
WDFN6  
(Pb−Free)  
3000/Tape &  
Reel  
THERMAL CHARACTERISTICS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance Junction−to−Ambient  
(Note 1)  
R
69  
°C/W  
q
JA  
Total Power Dissipation @ T = 25°C (Note 1)  
P
D
1.8  
W
A
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
2
1. Per JESD51−7 with 100 mm pad area and 2 oz. Cu.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2022 − Rev. 2  
NSS60201SMT/D  
 
1234567

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