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NSV40301MZ4T1G

更新时间： 2024-11-04 12:33:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 81K
描述
Bipolar Power Transistors 40 V, 3.0 A, Low VCE(sat)

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NSV40301MZ4T1G 数据手册

 浏览型号NSV40301MZ4T1G的Datasheet PDF文件第2页浏览型号NSV40301MZ4T1G的Datasheet PDF文件第3页浏览型号NSV40301MZ4T1G的Datasheet PDF文件第4页浏览型号NSV40301MZ4T1G的Datasheet PDF文件第5页浏览型号NSV40301MZ4T1G的Datasheet PDF文件第6页 
NSS40301MZ4  
Bipolar Power Transistors  
40 V, 3.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
http://onsemi.com  
transistors are surface mount devices featuring ultra low saturation  
voltage (V ) and high current gain capability. These are designed  
CE(sat)  
NPN TRANSISTOR  
3.0 AMPERES  
40 VOLTS, 2.0 WATTS  
for use in low voltage, high speed switching applications where  
affordable efficient energy control is important.  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
C 2, 4  
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
B 1  
E 3  
Schematic  
Features  
• Complement to NSS40300MZ4 Series  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
4
1
2
3
SOT−223  
CASE 318E  
STYLE 1  
• These Devices are Pb−Free, Halogen Free/BFR Free and are  
RoHS Compliant  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Adc  
W
AYW  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
40301G  
V
40  
1
CB  
EB  
V
6.0  
1.0  
3.0  
5.0  
A
Y
= Assembly Location  
Year  
Base Current − Continuous  
Collector Current − Continuous  
Collector Current − Peak  
I
B
C
W
= Work Week  
40301 = Specific Device Code  
I
G
= Pb−Free Package  
I
CM  
PIN ASSIGNMENT  
Total Power Dissipation  
P
D
Total P @ T = 25°C (Note 1)  
2.0  
0.80  
D
A
4
Total P @ T = 25°C (Note 2)  
D
A
C
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
B
1
C
2
E
3
1. Mounted on 1” sq. (645 sq. mm) Collector pad on FR−4 bd material.  
Top View Pinout  
2. Mounted on 0.012” sq. (7.6 sq. mm) Collector pad on FR−4 bd material.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 3  
NSS40301MZ4/D  
 
123456

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NSV40301MZ4T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS40301MZ4T1G ONSEMI

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