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NSV40501UW3 PDF预览

NSV40501UW3

更新时间： 2024-11-05 01:12:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 109K
描述
40 V, 5.0 A, Low VCE(sat) NPN Transistor

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NSS40501UW3,  
NSV40501UW3  
40 V, 5.0 A, Low VCE(sat)  
NPN Transistor  
2
ON Semiconductor’s e PowerEdge family of low V  
CE(sat)  
transistors are miniature surface mount devices featuring ultra low  
saturation voltage (V ) and high current gain capability. These  
CE(sat)  
http://onsemi.com  
are designed for use in low voltage, high speed switching applications  
where affordable efficient energy control is important.  
40 VOLTS, 5.0 AMPS  
NPN LOW VCE(sat) TRANSISTOR  
EQUIVALENT RDS(on) 38 mW  
Typical applications are DC−DC converters and power management  
in portable and battery powered products such as cellular and cordless  
phones, PDAs, computers, printers, digital cameras and MP3 players.  
Other applications are low voltage motor controls in mass storage  
products such as disc drives and tape drives. In the automotive  
industry they can be used in air bag deployment and in the instrument  
COLLECTOR  
3
2
cluster. The high current gain allows e PowerEdge devices to be  
driven directly from PMU’s control outputs, and the Linear Gain  
(Beta) makes them ideal components in analog amplifiers.  
Features  
1
BASE  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
2
EMITTER  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
3
Compliant  
WDFN3  
CASE 506AU  
MAXIMUM RATINGS (T = 25°C)  
A
2
1
Rating  
Symbol  
Max  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
A
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
MARKING DIAGRAM  
40  
6.0  
5.0  
7.0  
VB M G  
Collector Current − Continuous  
Collector Current − Peak  
Electrostatic Discharge  
I
C
G
I
CM  
1
ESD  
HBM Class 3B  
MM Class C  
VB = Specific Device Code  
M
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation, T = 25°C  
P
D
(Note 1)  
875  
7.0  
mW  
mW/°C  
A
ORDERING INFORMATION  
Derate above 25°C  
†
Thermal Resistance,  
R
(Note 1)  
143  
°C/W  
Device  
Package  
Shipping  
q
JA  
Junction−to−Ambient  
WDFN3  
(Pb−Free)  
3000/  
NSS40501UW3T2G  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
(Note 2)  
(Note 2)  
1.5  
11.8  
W
mW/°C  
A
D
Tape & Reel  
WDFN3  
(Pb−Free)  
3000/  
NSV40501UW3T2G  
Thermal Resistance,  
Junction−to−Ambient  
R
85  
°C/W  
°C/W  
°C  
q
JA  
Tape & Reel  
Thermal Resistance,  
Junction−to−Lead #3  
R
(Note 2)  
JL  
23  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
q
Junction and Storage  
Temperature Range  
T , T  
−55 to  
+150  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
2
1. FR−4 @ 100 mm , 1 oz copper traces.  
2. FR−4 @ 500 mm , 1 oz copper traces.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
August, 2013 − Rev. 5  
NSS40501UW3/D  
 
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