Datasheet > NST3906MX2T5G

NST3906MX2T5G

更新时间： 2023-09-03 20:34:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	113K
描述
200 mA, 40 V, PNP Bipolar Transistor in SOT-883

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NST3906MX2T5G 数据手册

DATA SHEET

www.onsemi.com

COLLECTOR

General Purpose Transistor

PNP Silicon

NST3906MX2

BASE

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

EMITTER

Compliant

MAXIMUM RATINGS

Rating

Symbol

Value

−40

Unit

Vdc

Collector−Emitter Voltage

Collector−Base Voltage

CEO

X2DFN3 (1.0 x 0.6 mm)

CASE 714AC

−40

Vdc

CBO

EBO

Emitter−Base Voltage

−5.0

−200

−800

Vdc

MARKING DIAGRAM

Collector Current − Continuous (Note 1)

Collector Current − Peak (Note 1)

mAdc

AF M

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

AF = Specific Device Code

= Date Code

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

ORDERING INFORMATION

Total Power Dissipation (Note 2)

@ T = 25°C

165

†

Derate above 25°C

1.39

mW/°C

Device

NST3906MX2T5G

Package

Shipping

X2DFN3

Thermal Resistance,

Junction−to−Ambient (Note 2)

720

°C/W

8000 / Tape &

Reel

(Pb−Free)

Total Power Dissipation (Note 3)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

@ T = 25°C

590

Derate above 25°C

4.93

mW/°C

Thermal Resistance,

Junction−to−Ambient (Note 3)

203

°C/W

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

1. Reference SOA Curve

2. Surface−mounted on FR4 board using a 0.6 mm , 2 oz. Cu pad

3. Surface−mounted on FR4 board using a 100 mm , 2 oz. Cu pad

Publication Order Number:

January, 2022 − Rev. 0

NST3906MX2/D

12 3 4 5 6

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