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NST489AMT1G PDF预览

NST489AMT1G

更新时间: 2024-11-04 03:45:55
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关小信号双极晶体管光电二极管便携式
页数 文件大小 规格书
4页 65K
描述
High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications

NST489AMT1G 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:TSSOP包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:1最大集电极电流 (IC):2 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):1.75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

NST489AMT1G 数据手册

 浏览型号NST489AMT1G的Datasheet PDF文件第2页浏览型号NST489AMT1G的Datasheet PDF文件第3页浏览型号NST489AMT1G的Datasheet PDF文件第4页 
NST489AMT1  
High Current Surface Mount  
NPN Silicon Low VCE(sat)  
Switching Transistor for  
Load Management in  
http://onsemi.com  
Portable Applications  
30 VOLTS, 3.0 AMPS  
NPN TRANSISTOR  
Features  
Pb−Free Package is Available  
COLLECTOR  
1, 2, 5, 6  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Max  
30  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
3
BASE  
V
50  
V
CBO  
EBO  
V
5.0  
2.0  
3.0  
V
4
Collector Current − Continuous  
Collector Current − Peak  
I
C
A
EMITTER  
I
A
CM  
4
THERMAL CHARACTERISTICS  
Characteristic  
5
6
Symbol  
Max  
Unit  
3
2
1
Total Device Dissipation  
P
D
(Note 1)  
T = 25°C  
535  
4.3  
mW  
mW/°C  
A
TSOP−6  
CASE 318G  
STYLE 6  
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
234  
°C/W  
q
JA  
Total Device Dissipation  
P
(Note 2)  
(Note 2)  
D
DEVICE MARKING  
T = 25°C  
1.180  
9.4  
W
mW/°C  
A
Derate above 25°C  
Thermal Resistance,  
Junction−to−Ambient  
R
106  
°C/W  
q
JA  
N2 M G  
G
Thermal Resistance,  
Junction−to−Lead #1  
R
R
(Note 1)  
(Note 2)  
110  
50  
°C/W  
°C/W  
q
q
JL  
JL  
Total Device Dissipation  
(Single Pulse < 10 s)  
P
1.75  
W
N2 = Specific Device Code  
Dsingle  
(Notes 2 and 3)  
M
= Date Code*  
G
= Pb−Free Package  
Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending upon  
manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR4 with 1 oz and 3.9 mm of copper area.  
2. FR4 with 1 oz and 645 mm of copper area.  
ORDERING INFORMATION  
2
2
Device  
Package  
Shipping  
3. Refer to Figure 8.  
TSSOP−6  
NST489AMT1  
3000/Tape & Reel  
3000/Tape & Reel  
NST489AMT1G  
TSSOP−6  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
April, 2006 − Rev. 7  
NST489AMT1/D  
 

NST489AMT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSVT489AMT1G ONSEMI

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