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NST3946DP6T5G

更新时间： 2024-09-24 10:31:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
7页 104K
描述
Dual Complementary General Purpose Transistor

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中文翻译

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NST3946DP6T5G 数据手册

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NST3946DP6T5G  
Dual Complementary  
General Purpose Transistor  
The NST3946DP6T5G device is a spin−off of our popular  
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for  
general purpose amplifier applications and is housed in the SOT−963  
six−leaded surface mount package. By putting two discrete devices in  
one package, this device is ideal for low−power surface mount  
applications where board space is at a premium.  
http://onsemi.com  
Features  
(3)  
(2)  
(1)  
Q
• h , 100−300  
FE  
• Low V  
, ≤ 0.4 V  
CE(sat)  
Q
1
2
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• This is a Pb−Free Device  
(4)  
(5)  
(6)  
NST3946DP6T5G*  
MAXIMUM RATINGS  
*Q1 PNP  
Q2 NPN  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Electrostatic Discharge  
V
CEO  
V
CBO  
60  
Vdc  
4
5
6
V
EBO  
6.0  
Vdc  
I
C
200  
mAdc  
3
2
1
HBM  
MM  
ESD  
Class  
2
B
SOT−963  
CASE 527AD  
PLASTIC  
THERMAL CHARACTERISTICS  
Characteristic (Single Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation T = 25°C  
P
D
240  
1.9  
mW  
mW/°C  
A
Derate above 25°C (Note 1)  
MARKING DIAGRAM  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
R
520  
°C/W  
q
JA  
L
M G  
Total Device Dissipation T = 25°C  
P
280  
2.2  
mW  
mW/°C  
A
D
G
Derate above 25°C (Note 2)  
1
Thermal Resistance, Junction-to-Ambient  
(Note 2)  
R
q
JA  
446  
°C/W  
L
= Device Code  
(180° Clockwise Rotation)  
= Date Code  
= Pb−Free Package  
Characteristic (Dual Heated) (Note 3)  
Symbol  
Max  
Unit  
M
G
Total Device Dissipation T = 25°C  
P
D
350  
2.8  
mW  
mW/°C  
A
Derate above 25°C (Note 1)  
(Note: Microdot may be in either location)  
Thermal Resistance, Junction-to-Ambient  
(Note 1)  
R
q
JA  
357  
°C/W  
Total Device Dissipation T = 25°C  
P
D
420  
3.4  
mW  
mW/°C  
A
ORDERING INFORMATION  
Derate above 25°C (Note 2)  
†
Thermal Resistance, Junction-to-Ambient  
(Note 2)  
R
q
JA  
297  
°C/W  
Device  
Package  
Shipping  
NST3946DP6T5G SOT−963 8000/Tape & Reel  
(Pb−Free)  
Junction and Storage Temperature Range T , T  
−55 to  
+150  
°C  
J
stg  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
2
1. FR−4 @ 100 mm , 1 oz. copper traces, still air.  
2
2. FR−4 @ 500 mm , 1 oz. copper traces, still air.  
3. Dual heated values assume total power is sum of two equally powered channels  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 1  
NST3946DP6/D  
 
1234567

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