NSQ03A04

更新时间： 2024-11-06 10:31:59

品牌	Logo	应用领域
NIEC		肖特基二极管光电二极管瞄准线
页数	文件大小	规格书
6页	51K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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NSQ03A04 数据手册

SBD

T y p e : NSQ03A04

OUTLINE DRAWING

FEATURES

* FLAT-PAK Surface Mounting Device

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Capability

* 30 Volts through 60Volts Types Available

* Packaged in 16mm Tape and Reel

* Not Rolling During Assembly

Maximum Ratings

Approx Net Weight:0.16g

Rating

Symbol

V_RRM

NSQ03A04

Unit

Repetitive Peak Reverse Voltage

1.62 Ta=25°C *1

3.0 Tl=113°C

50Hz Half Sine

Wave Resistive Load

Average Rectified Output Current

RMS Forward Current

I_o

I_F(RMS)

I_FSM

4.71

50Hz Half Sine Wave,1cycle

Non-repetitive

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

-40 to +150

°C

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max.

Unit

Peak Reverse Current

Peak Forward Voltage

I_RM

V_FM

0.55

Tj= 25°C, V_RM= V_RRM

Tj= 25°C, I_FM= 3.0A

Alumina Substrate Mounted *1

Thermal Junction to Ambient Rth_(j-a)

Resistance

°C /W

Junction to Lead

Rth_(j-l)

*1 Alumina Substrate Mounted (Soldering Lands=2x3.5mm,Both Sides)

(Tl: Lead Temperature)

12 3 4 5 6

中文翻译

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