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NSQ03A04 PDF预览

NSQ03A04

更新时间: 2024-11-18 10:31:59
品牌 Logo 应用领域
NIEC 肖特基二极管光电二极管瞄准线
页数 文件大小 规格书
6页 51K
描述
Schottky Barrier Diode

NSQ03A04 数据手册

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SBD  
T y p e : NSQ03A04  
OUTLINE DRAWING  
FEATURES  
* FLAT-PAK Surface Mounting Device  
* Low Forward Voltage Drop  
* Low Power Loss,High Efficiency  
* High Surge Capability  
* 30 Volts through 60Volts Types Available  
* Packaged in 16mm Tape and Reel  
* Not Rolling During Assembly  
Maximum Ratings  
Approx Net Weight:0.16g  
Rating  
Symbol  
VRRM  
NSQ03A04  
40  
Unit  
V
Repetitive Peak Reverse Voltage  
1.62 Ta=25°C *1  
3.0 Tl=113°C  
50Hz Half Sine  
Wave Resistive Load  
Average Rectified Output Current  
RMS Forward Current  
Io  
A
A
A
IF(RMS)  
IFSM  
4.71  
50Hz Half Sine Wave,1cycle  
Non-repetitive  
Surge Forward Current  
80  
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
-40 to +150  
-40 to +150  
°C  
°C  
Electrical Thermal Characteristics  
Characteristics  
Symbol  
Conditions  
Min. Typ. Max.  
Unit  
Peak Reverse Current  
Peak Forward Voltage  
IRM  
VFM  
-
-
-
-
-
-
-
-
3
0.55  
89  
mA  
V
Tj= 25°C, VRM= VRRM  
Tj= 25°C, IFM= 3.0A  
Alumina Substrate Mounted *1  
-
Thermal Junction to Ambient Rth(j-a)  
Resistance  
°C /W  
Junction to Lead  
Rth(j-l)  
13  
*1 Alumina Substrate Mounted (Soldering Lands=2x3.5mm,Both Sides)  
(Tl: Lead Temperature)  

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