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NSQ2369 PDF预览

NSQ2369

更新时间: 2024-11-18 20:43:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
2页 87K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, TO-116, 14 PIN

NSQ2369 技术参数

生命周期:Obsolete零件包装代码:DIP
包装说明:IN-LINE, R-XDIP-T14针数:14
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:15 V
配置:SEPARATE, 4 ELEMENTS最小直流电流增益 (hFE):40
JEDEC-95代码:TO-116JESD-30 代码:R-XDIP-T14
元件数量:4端子数量:14
最高工作温度:200 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):500 MHz最大关闭时间(toff):20 ns
最大开启时间(吨):15 nsBase Number Matches:1

NSQ2369 数据手册

 浏览型号NSQ2369的Datasheet PDF文件第2页 

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