生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | IN-LINE, R-XDIP-T14 | 针数: | 14 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 15 V |
配置: | SEPARATE, 4 ELEMENTS | 最小直流电流增益 (hFE): | 40 |
JEDEC-95代码: | TO-116 | JESD-30 代码: | R-XDIP-T14 |
元件数量: | 4 | 端子数量: | 14 |
最高工作温度: | 200 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 500 MHz | 最大关闭时间(toff): | 20 ns |
最大开启时间(吨): | 15 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSQ2484 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116 | |
NSQ2906 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116, | |
NSQ2907 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, | |
NSQ3467 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Ceramic, | |
NSQ3724 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami | |
NSQ3725 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami | |
NSQ3798 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116 | |
NSQ6002 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 4-Element, NPN and PNP, Silicon, TO-116 | |
NSQ6659 | ETC |
获取价格 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 35V V(BR)DSS | 850MA I(D) | DIP | |
NSQ6660 | ETC |
获取价格 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 60V V(BR)DSS | 460MA I(D) | DIP |