是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-CDIP-T14 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.92 | 最大集电极电流 (IC): | 0.5 A |
集电极-发射极最大电压: | 40 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | JEDEC-95代码: | TO-116 |
JESD-30 代码: | R-CDIP-T14 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 14 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSQ2222 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, | |
NSQ2369 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, | |
NSQ2484 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116 | |
NSQ2906 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116, | |
NSQ2907 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, | |
NSQ3467 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Ceramic, | |
NSQ3724 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami | |
NSQ3725 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami | |
NSQ3798 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116 | |
NSQ6002 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 4-Element, NPN and PNP, Silicon, TO-116 |