5秒后页面跳转
NSQ2222 PDF预览

NSQ2222

更新时间: 2024-11-09 20:55:35
品牌 Logo 应用领域
美高森美 - MICROSEMI 开关晶体管
页数 文件大小 规格书
1页 30K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, TO-116, 14 PIN

NSQ2222 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:DIP包装说明:IN-LINE, R-XDIP-T14
针数:14Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:SEPARATE, 4 ELEMENTS最小直流电流增益 (hFE):30
JEDEC-95代码:TO-116JESD-30 代码:R-XDIP-T14
JESD-609代码:e0元件数量:4
端子数量:14最高工作温度:200 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):300 ns最大开启时间(吨):40 ns
Base Number Matches:1

NSQ2222 数据手册

  
This Material Copyrighted By Its Respective Manufacturer  

与NSQ2222相关器件

型号 品牌 获取价格 描述 数据表
NSQ2369 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 4-Element, NPN, Silicon, TO-116,
NSQ2484 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116
NSQ2906 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116,
NSQ2907 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,
NSQ3467 MICROSEMI

获取价格

Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Ceramic,
NSQ3724 MICROSEMI

获取价格

Power Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami
NSQ3725 MICROSEMI

获取价格

Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami
NSQ3798 MICROSEMI

获取价格

Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116
NSQ6002 MICROSEMI

获取价格

Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 4-Element, NPN and PNP, Silicon, TO-116
NSQ6659 ETC

获取价格

TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 35V V(BR)DSS | 850MA I(D) | DIP