是否无铅: | 含铅 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | IN-LINE, R-XDIP-T14 |
针数: | 14 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 40 V |
配置: | SEPARATE, 4 ELEMENTS | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-116 | JESD-30 代码: | R-XDIP-T14 |
JESD-609代码: | e0 | 元件数量: | 4 |
端子数量: | 14 | 最高工作温度: | 200 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
最大关闭时间(toff): | 300 ns | 最大开启时间(吨): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSQ2369 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 15V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, | |
NSQ2484 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-116 | |
NSQ2906 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116, | |
NSQ2907 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, | |
NSQ3467 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 4-Element, PNP, Silicon, TO-116, Ceramic, | |
NSQ3724 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami | |
NSQ3725 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Cerami | |
NSQ3798 | MICROSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-116 | |
NSQ6002 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 4-Element, NPN and PNP, Silicon, TO-116 | |
NSQ6659 | ETC |
获取价格 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 35V V(BR)DSS | 850MA I(D) | DIP |