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NSBA113EF3T5G PDF预览

NSBA113EF3T5G

更新时间： 2024-09-17 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
11页 177K
描述
PNP Bipolar Digital Transistor (BRT)

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中文翻译

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NSBA113EF3T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：4 weeks风险等级：5.77
其他特性：BUILT IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：3JESD-30 代码：R-PDSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
最大功率耗散 (Abs)：0.297 W参考标准：AEC-Q101
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSBA113EF3T5G 数据手册

 浏览型号NSBA113EF3T5G的Datasheet PDF文件第2页浏览型号NSBA113EF3T5G的Datasheet PDF文件第3页浏览型号NSBA113EF3T5G的Datasheet PDF文件第4页浏览型号NSBA113EF3T5G的Datasheet PDF文件第5页浏览型号NSBA113EF3T5G的Datasheet PDF文件第6页浏览型号NSBA113EF3T5G的Datasheet PDF文件第7页 
MUN2130, MMUN2130L,  
MUN5130, DTA113EE,  
DTA113EM3, NSBA113EF3  
Digital Transistors (BRT)  
R1 = 1 kW, R2 = 1 kW  
www.onsemi.com  
PNP Transistors with Monolithic Bias  
Resistor Network  
PIN CONNECTIONS  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
SC−59  
CASE 318D  
STYLE 1  
XX MG  
G
1
SOT−23  
CASE 318  
STYLE 6  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
XXX MG  
Compliant  
G
1
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC−70/SOT−323  
CASE 419  
XX MG  
V
CBO  
CEO  
G
STYLE 3  
1
V
50  
Vdc  
SC−75  
CASE 463  
STYLE 1  
I
C
100  
10  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
IN(rev)  
10  
Vdc  
SOT−723  
CASE 631AA  
STYLE 1  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1
SOT−1123  
CASE 524AA  
STYLE 1  
X M  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information on  
page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
October, 2016 − Rev. 6  
DTA113E/D  
1234567...11

中文翻译

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