5秒后页面跳转
捷配首页

Datasheet > NSBA114YDXV6T5G
NSBA114YDXV6T5G PDF预览

NSBA114YDXV6T5G

更新时间： 2024-11-25 20:04:51
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
8页 120K
描述
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN

阅读下载

中文翻译

获取价格

NSBA114YDXV6T5G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.73其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.21
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

NSBA114YDXV6T5G 数据手册

 浏览型号NSBA114YDXV6T5G的Datasheet PDF文件第2页浏览型号NSBA114YDXV6T5G的Datasheet PDF文件第3页浏览型号NSBA114YDXV6T5G的Datasheet PDF文件第4页浏览型号NSBA114YDXV6T5G的Datasheet PDF文件第5页浏览型号NSBA114YDXV6T5G的Datasheet PDF文件第6页浏览型号NSBA114YDXV6T5G的Datasheet PDF文件第7页 
MUN5114DW1,  
NSBA114YDXV6,  
NSBA114YDP6  
Dual PNP Bias Resistor  
Transistors  
R1 = 10 kW, R2 = 47 kW  
http://onsemi.com  
PIN CONNECTIONS  
(2)  
PNP Transistors with Monolithic Bias  
Resistor Network  
(3)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
Features  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
6
SOT−363  
CASE 419B  
0D M G  
• Reduces Component Count  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
1
1
Compliant  
MAXIMUM RATINGS  
SOT−563  
CASE 463A  
(T = 25°C, common for Q1 and Q2, unless otherwise noted)  
0D M G  
A
G
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
CBO  
CEO  
V
50  
Vdc  
SOT−963  
CASE 527AD  
M G  
I
C
100  
40  
mAdc  
Vdc  
Q
G
V
IN(fwd)  
1
Input Reverse Voltage  
V
6
Vdc  
IN(rev)  
0D/Q  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5114DW1T1G,  
SMUN5114DW1T1G  
SOT−363  
3,000 / Tape & Reel  
NSBA114YDXV6T1G  
NSBA114YDP6T5G  
SOT−563  
SOT−963  
4,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTA114YD/D  
12345678

中文翻译

下载PDF

与NSBA114YDXV6T5G相关器件

型号 品牌 获取价格 描述 数据表
NSBA114YF3 ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
NSBA114YF3T5G ONSEMI

获取价格

 		Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
NSBA114YF3T5TG ONSEMI

获取价格

 		Digital Transistors (BRT)
NSBA115EDXV6T1 ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T1 ROCHESTER

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T1G ONSEMI

获取价格

 		Dual PNP Bipolar Digital Transistor (BRT)
NSBA115EDXV6T5 ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T5G ONSEMI

获取价格

 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA115TDP6T5G ONSEMI

获取价格

 		Dual Digital Transistors (BRT)
NSBA115TF3T5G ONSEMI

获取价格

 		Digital Transistors (BRT)

与NSBA114YDXV6T5G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证