Datasheet > NSBA123EDXV6

NSBA123EDXV6

更新时间： 2024-11-25 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	110K
描述
Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k

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中文翻译

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数据手册

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NSBA123EDXV6 数据手册

MUN5131DW1,

NSBA123EDXV6

Dual PNP Bias Resistor

Transistors

R1 = 2.2 kW, R2 = 2.2 kW

http://onsemi.com

PIN CONNECTIONS

(2)

PNP Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(1)

Features

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

MARKING DIAGRAMS

• Reduces Component Count

SOT−363

CASE 419B

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

0H M G

Compliant

MAXIMUM RATINGS

(T = 25°C, common for Q1 and Q2, unless otherwise noted)

SOT−563

CASE 463A

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

0H M G

CBO

CEO

Vdc

100

mAdc

Vdc

Specific Device Code

Date Code*

Pb−Free Package

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

(Note: Microdot may be in either location)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5131DW1T1G,

SMUN5131DW1T1G

SOT−363

3,000 / Tape & Reel

NSBA123EDXV6T1G

SOT−563

4,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2012 − Rev. 0

DTA123ED/D

12 3 4 5 6

中文翻译

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与NSBA123EDXV6相关器件

型号	品牌	获取价格	描述	数据表
NSBA123EDXV6T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA123EDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA123EDXV6T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
NSBA123EDXV6T5G	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA123EF3	ONSEMI	获取价格	PNP Transistors with Monolithic Bias Resistor Network
NSBA123EF3T5G	ONSEMI	获取价格	PNP Transistors with Monolithic Bias Resistor Network
NSBA123JDP6	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors
NSBA123JDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBA123JDXV6	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors
NSBA123JDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

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