Datasheet > NSBA123JDXV6

NSBA123JDXV6

更新时间： 2024-11-26 01:11:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	90K
描述
Dual PNP Bias Resistor Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSBA123JDXV6 数据手册

MUN5135DW1,

NSBA123JDXV6,

NSBA123JDP6

Dual PNP Bias Resistor

Transistors

R1 = 2.2 kW, R2 = 47 kW

PNP Transistors with Monolithic Bias

Resistor Network

www.onsemi.com

PIN CONNECTIONS

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(3)

(2)

(1)

Features

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

MARKING DIAGRAMS

• Reduces Component Count

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

SOT−363

CASE 419B

0M M G

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

SOT−563

CASE 463A

MAXIMUM RATINGS

(T = 25°C, common for Q1 and Q2, unless otherwise noted)

0M M G

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

CBO

CEO

SOT−963

CASE 527AD

Vdc

M G

100

mAdc

Vdc

IN(fwd)

Input Reverse Voltage

IN(rev)

Vdc

0M/P

= Specific Device Code

Date Code*

Pb−Free Package

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5135DW1T1G,

SOT−363

3,000 / Tape & Reel

NSVMUN5135DW1T1G

NSBA123JDXV6T5G

NSBA123JDP6T5G

SOT−563

SOT−963

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2016 − Rev. 2

DTA123JD/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NSBA123JDXV6相关器件

型号	品牌	获取价格	描述	数据表
NSBA123JDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA123JDXV6T1G	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA123JDXV6T1G	ONSEMI	获取价格	Dual PNP Bipolar Digital Transistor (BRT)
NSBA123JDXV6T5	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA123JDXV6T5G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors
NSBA123JF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k
NSBA123JF3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA123TDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBA123TF3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA124EDP6	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 22 k, R2 = 22 k

与NSBA123JDXV6相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

42
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

57

产品中心

服务支持

精选活动

关于我们

帮助中心

NSBA123JDXV6

NSBA123JDXV6 数据手册

与NSBA123JDXV6相关器件

与NSBA123JDXV6相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSBA123JDXV6

NSBA123JDXV6 数据手册

与NSBA123JDXV6相关器件

与NSBA123JDXV6相关文章

您还可以找

您在本页遇到什么问题？