Datasheet > NSBA114YF3

NSBA114YF3

更新时间： 2024-11-25 12:22:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
12页	147K
描述
Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

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数据手册

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NSBA114YF3 数据手册

MUN2114, MMUN2114L,

MUN5114, DTA114YE,

DTA114YM3, NSBA114YF3

Digital Transistors (BRT)

R1 = 10 kW, R2 = 47 kW

http://onsemi.com

PIN CONNECTIONS

PNP Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

SC−59

CASE 318D

STYLE 1

XX MG

SOT−23

CASE 318

STYLE 6

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

XXX MG

MAXIMUM RATINGS (T = 25°C)

SC−70/SOT−323

CASE 419

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

XX MG

STYLE 3

CBO

CEO

Vdc

SC−75

CASE 463

STYLE 1

100

mAdc

Vdc

XX M

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

SOT−723

CASE 631AA

STYLE 1

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

= Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2012

Publication Order Number:

September, 2012 − Rev. 1

DTA114Y/D

12 3 4 5 6 7...12

中文翻译

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与NSBA114YF3相关器件

型号	品牌	获取价格	描述	数据表
NSBA114YF3T5G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
NSBA114YF3T5TG	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA115EDXV6T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T1G	ONSEMI	获取价格	Dual PNP Bipolar Digital Transistor (BRT)
NSBA115EDXV6T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T5G	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA115TDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBA115TF3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA123EDXV6	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k

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