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NSBA114EDXV6T5 PDF预览

NSBA114EDXV6T5

更新时间： 2024-11-25 19:54:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
12页 157K
描述
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

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NSBA114EDXV6T5 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：PLASTIC, CASE 463A-01, 6 PIN针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：5.23
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：35JESD-30 代码：R-PDSO-F6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：0.5 W
认证状态：Not Qualified子类别：BIP General Purpose Small Signal
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSBA114EDXV6T5 数据手册

 浏览型号NSBA114EDXV6T5的Datasheet PDF文件第2页浏览型号NSBA114EDXV6T5的Datasheet PDF文件第3页浏览型号NSBA114EDXV6T5的Datasheet PDF文件第4页浏览型号NSBA114EDXV6T5的Datasheet PDF文件第5页浏览型号NSBA114EDXV6T5的Datasheet PDF文件第6页浏览型号NSBA114EDXV6T5的Datasheet PDF文件第7页 
NSBA114EDXV6T1,  
NSBA114EDXV6T5  
Preferred Devices  
Dual Bias Resistor  
Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
(3)  
(2)  
(1)  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the NSBA114EDXV6T1  
series, two BRT devices are housed in the SOT−563 package which is  
ideal for low−power surface mount applications where board space is  
at a premium.  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch Tape and Reel  
• Lead Free Solder Plating  
4
5
6
3
2
1
SOT−563  
CASE 463A  
PLASTIC  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
V
V
−50  
−50  
CBO  
CEO  
xx D  
Collector-Emitter Voltage  
Collector Current  
Vdc  
I
C
−100  
mAdc  
xx = Specific Device Code  
(see table on page 2)  
THERMAL CHARACTERISTICS  
D
= Date Code  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
ORDERING INFORMATION  
Total Device Dissipation  
T = 25°C  
P
357  
(Note 1)  
2.9  
mW  
A
D
Device  
Package  
Shipping  
Derate above 25°C  
mW/°C  
°C/W  
(Note 1)  
NSBA114EDXV6T1 SOT−563  
4 mm pitch  
4000/Tape & Reel  
Thermal Resistance Junction-to-Ambient  
R
350  
q
JA  
(Note 1)  
NSBA114EDXV6T5 SOT−563  
2 mm pitch  
Characteristic  
8000/Tape & Reel  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
P
500  
(Note 1)  
4.0  
mW  
A
D
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Derate above 25°C  
mW/°C  
°C/W  
°C  
(Note 1)  
Thermal Resistance Junction-to-Ambient  
R
250  
(Note 1)  
q
JA  
Preferred devices are recommended choices for future use  
and best overall value.  
Junction and Storage  
Temperature Range  
T , T  
J
−55 to  
+150  
stg  
1. FR−4 @ Minimum Pad  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
January, 2004 − Rev. 3  
NSBA114EDXV6/D  
 
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NSBA114EDXV6T5 替代型号

型号 品牌 替代类型 描述 数据表
NSBA114EDXV6T1G ONSEMI

完全替代

 Dual PNP Bias Resistor Transistors
NSBA123TDP6T5G ONSEMI

功能相似

 Dual Digital Transistors (BRT)
NSBA123JDP6T5G ONSEMI

功能相似

 Dual Digital Transistors (BRT)

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NSBA114EDXV6T5G ROCHESTER

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA114EDXV6T5G ONSEMI

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
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NSBA114EF3T5G ONSEMI

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NSBA114EFT5G ONSEMI

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 		Dual Digital Transistors (BRT)
NSBA114TDXV6T1 ONSEMI

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA114TDXV6T1 ROCHESTER

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA114TDXV6T1G ONSEMI

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 		Dual PNP Bias Resistor Transistors
NSBA114TDXV6T5 ONSEMI

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

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