Datasheet > NSBA114YDXV6

NSBA114YDXV6

更新时间： 2024-09-17 01:16:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	124K
描述
Dual PNP Bias Resistor Transistors R1 = 10 k, R2 = 47 k

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中文翻译

获取价格

数据手册

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NSBA114YDXV6 数据手册

MUN5114DW1,

NSBA114YDXV6,

NSBA114YDP6

Dual PNP Bias Resistor

Transistors

R1 = 10 kW, R2 = 47 kW

http://onsemi.com

PIN CONNECTIONS

(2)

PNP Transistors with Monolithic Bias

Resistor Network

(3)

(1)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

(4)

(5)

(6)

Features

• S and NSV Prefix for Automotive and Other Applications

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

SOT−363

CASE 419B

0D M G

• Reduces Component Count

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

SOT−563

CASE 463A

(T = 25°C, common for Q1 and Q2, unless otherwise noted)

0D M G

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

CBO

CEO

Vdc

SOT−963

CASE 527AD

M G

100

mAdc

Vdc

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

0D/Q

Specific Device Code

Date Code*

Pb−Free Package

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MUN5114DW1T1G,

SMUN5114DW1T1G

SOT−363

3,000 / Tape & Reel

NSBA114YDXV6T1G

NSBA114YDP6T5G

SOT−563

SOT−963

4,000 / Tape & Reel

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2012 − Rev. 0

DTA114YD/D

12 3 4 5 6 7 8

中文翻译

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与NSBA114YDXV6相关器件

型号	品牌	获取价格	描述	数据表
NSBA114YDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA114YDXV6T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA114YDXV6T1G	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors R1 = 10 k, R2 = 47 k
NSBA114YDXV6T5	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA114YDXV6T5G	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA114YF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
NSBA114YF3T5G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 10 k, R2 = 47 k
NSBA114YF3T5TG	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA115EDXV6T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA115EDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

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