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NSB8KTHE3_A/I

更新时间： 2024-11-27 22:54:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 128K
描述
DIODE GEN PURP 800V 8A TO263AB

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NSB8KTHE3_A/I 数据手册

 浏览型号NSB8KTHE3_A/I的Datasheet PDF文件第2页浏览型号NSB8KTHE3_A/I的Datasheet PDF文件第3页浏览型号NSB8KTHE3_A/I的Datasheet PDF文件第4页浏览型号NSB8KTHE3_A/I的Datasheet PDF文件第5页 
NS8xT, NSF8xT, NSB8xT  
Vishay General Semiconductor  
www.vishay.com  
Glass Passivated General Purpose Plastic Rectifier  
FEATURES  
TO-220AC  
ITO-220AC  
• Power pack  
• Glass passivated chip junction  
• Low forward voltage drop  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C (for TO-263AB package)  
2
2
1
1
• Solder dip 275 °C max. 10 s, per JESD 22-B106 (for  
TO-220AC and ITO-220AC package)  
NS8xT  
PIN 1  
NSF8xT  
PIN 1  
CASE  
• AEC-Q101 qualified  
PIN 2  
PIN 2  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
TO-263AB  
K
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes application.  
2
1
NSB8xT  
PIN 1  
K
MECHANICAL DATA  
PIN 2  
HEATSINK  
Case: TO-220AC, ITO-220AC, TO-263AB  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commerical grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
IF(AV)  
8.0 A  
VRRM  
IFSM  
50 V to 1000 V  
125 A  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
VF  
1.1 V  
meets JESD 201 class 2 whisker test  
TJ max.  
150 °C  
Polarity: As marked  
TO-220AC, ITO-220AC,  
TO-263AB  
Package  
Mounting Torque: 10 in-lbs maximum  
Diode variation  
Single  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL NS8AT NS8BT NS8DT NS8GT NS8JT NS8KT NS8MT UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
at TC = 100 °C  
IF(AV)  
8.0  
A
Peak forward surge current 8.3 ms single sine-wave  
IFSM  
TJ, TSTG  
VAC  
125  
- 55 to + 150  
1500  
A
°C  
V
superimposed on rated load  
Operating junction and storage temperature range  
Isolation voltage (ITO-220AC only)  
from terminal to heatsink t = 1 min  
Revision: 20-Jan-14  
Document Number: 88690  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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与NSB8KTHE3_A/I相关器件

型号 品牌 获取价格 描述 数据表
NSB8KTHE3_A/P VISHAY

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 		DIODE GEN PURP 800V 8A TO263AB
NSB8MT VISHAY

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 		Glass Passivated General Purpose Plastic Rectifier
NSB8MT/81 VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-
NSB8MT-E3/45 VISHAY

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 		DIODE GEN PURP 1KV 8A TO263AB
NSB8MT-E3/81 VISHAY

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 		DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
NSB8MT-E3/P VISHAY

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 		Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, D2PAK-3/2
NSB8MTHE3/45 VISHAY

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 		DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
NSB8MTHE3/81 VISHAY

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 		DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
NSB8MTHE3_A/I VISHAY

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 		DIODE GEN PURP 1KV 8A TO263AB
NSB8MTHE3_A/P VISHAY

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 		DIODE GEN PURP 1KV 8A TO263AB

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