是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.54 |
配置: | SINGLE | 二极管类型: | RECTIFIER DIODE |
最大正向电压 (VF): | 1.1 V | 最大非重复峰值正向电流: | 175 A |
元件数量: | 1 | 最高工作温度: | 150 °C |
最大输出电流: | 8 A | 最大重复峰值反向电压: | 1000 V |
子类别: | Rectifier Diodes | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NSB8MT/81 | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE- | |
NSB8MT-E3/45 | VISHAY |
获取价格 |
DIODE GEN PURP 1KV 8A TO263AB | |
NSB8MT-E3/81 | VISHAY |
获取价格 |
DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, | |
NSB8MT-E3/P | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, D2PAK-3/2 | |
NSB8MTHE3/45 | VISHAY |
获取价格 |
DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, | |
NSB8MTHE3/81 | VISHAY |
获取价格 |
DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, | |
NSB8MTHE3_A/I | VISHAY |
获取价格 |
DIODE GEN PURP 1KV 8A TO263AB | |
NSB8MTHE3_A/P | VISHAY |
获取价格 |
DIODE GEN PURP 1KV 8A TO263AB | |
NSB9435T1 | ONSEMI |
获取价格 |
High Current Bias Resistor Transistor | |
NSB9435T1/D | ONSEMI |
获取价格 |
High Current Bias Resistor Transistor |