5秒后页面跳转
NSB8MT PDF预览

NSB8MT

更新时间: 2024-11-05 21:54:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
3页 44K
描述
Glass Passivated General Purpose Plastic Rectifier

NSB8MT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknown风险等级:5.54
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:175 A
元件数量:1最高工作温度:150 °C
最大输出电流:8 A最大重复峰值反向电压:1000 V
子类别:Rectifier Diodes表面贴装:YES
Base Number Matches:1

NSB8MT 数据手册

 浏览型号NSB8MT的Datasheet PDF文件第2页浏览型号NSB8MT的Datasheet PDF文件第3页 
NSxT, NSFxT, NSBxT  
Vishay Semiconductors  
formerly General Semiconductor  
Glass Passivated General Purpose  
Plastic Rectifier  
Reverse Voltage 50 to 1000  
Forward Current 8.0A  
ITO-220AC (NSFxT)  
0.188 (4.77)  
0.172 (4.36)  
0.405 (10.27)  
0.383 (9.72)  
0.110 (2.80)  
0.100 (2.54)  
TO-220AC (NSxT)  
0.131 (3.39)  
0.122 (3.08)  
0.140 (3.56)  
0.130 (3.30)  
DIA.  
DIA.  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.154 (3.91)  
0.148 (3.74)  
0.676 (17.2)  
0.646 (16.4)  
DIA.  
0.600 (15.5)  
0.055 (1.39)  
0.045 (1.14)  
0.370 (9.40)  
0.360 (9.14)  
0.580 (14.5)  
0.350 (8.89)  
0.330 (8.38)  
0.113 (2.87)  
0.103 (2.62)  
PIN  
0.145 (3.68)  
0.135 (3.43)  
1
2
0.191 (4.85)  
0.171 (4.35)  
0.603 (15.32)  
0.573 (14.55)  
0.410 (10.41)  
0.390 (9.91)  
0.350 (8.89)  
0.330 (8.38)  
0.635 (16.13)  
0.625 (15.87)  
0.110 (2.80)  
0.100 (2.54)  
0.560 (14.22)  
0.530 (13.46)  
0.060 (1.52)  
PIN 1  
PIN  
1
2
1.148 (29.16)  
1.118 (28.40)  
0.160 (4.06)  
0.140 (3.56)  
PIN 2  
0.110 (2.79)  
0.100 (2.54)  
0.037 (0.94)  
0.027 (0.69)  
0.022 (0.55)  
0.014 (0.36)  
0.560 (14.22)  
0.205 (5.20)  
0.195 (4.95)  
PIN 1  
PIN 2  
0.530 (13.46)  
CASE  
0.105 (2.67)  
TO-263AB (NSBxT)  
0.037 (0.94)  
0.027 (0.68)  
0.095 (2.41)  
0.022 (0.56)  
0.014 (0.36)  
0.190 (4.83)  
0.160 (4.06)  
0.411 (10.45)  
0.380 (9.65)  
0.205 (5.20)  
0.195 (4.95)  
0.055 (1.40)  
0.045 (1.14)  
0.245 (6.22)  
MIN  
Mounting Pad Layout TO-263AB  
K
0.42  
(10.66)  
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.591 (15.00)  
Dimensions in inches  
and (millimeters)  
0.33  
(8.38)  
K
1
2
0-0.01 (0-0.254)  
0.63  
(17.02)  
0.110 (2.79)  
0.090 (2.29)  
0.027 (0.686)  
0.037 (0.940)  
0.021 (0.53)  
0.014 (0.36)  
PIN 1  
PIN 2  
K - HEATSINK  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
0.08  
0.205 (5.20)  
0.195 (4.95)  
(2.032)  
0.12  
(3.05)  
0.24  
(6.096)  
Features  
Mechanical Data  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
• High forward current capability  
• High surge current capability  
• Low forward voltage drop  
Case: JEDEC TO-220AC, ITO-220AC &  
TO-263AB molded plastic body  
Terminals: Plated leads solderable per  
MIL-STD-750, Method 2026  
Polarity: As marked  
• Glass passivated chip junction  
• High temperature soldering guaranteed:  
260°C/10 seconds, 0.160” (4.06mm) lead  
length  
Mounting Torque: 10 in. -lbs. max.  
Mounting Position: Any  
Weight: 0.064 ounce, 1.81 grams  
Document Number 88690  
08-Jul-02  
www.vishay.com  
1

与NSB8MT相关器件

型号 品牌 获取价格 描述 数据表
NSB8MT/81 VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, PLASTIC PACKAGE-
NSB8MT-E3/45 VISHAY

获取价格

DIODE GEN PURP 1KV 8A TO263AB
NSB8MT-E3/81 VISHAY

获取价格

DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
NSB8MT-E3/P VISHAY

获取价格

Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-263AB, D2PAK-3/2
NSB8MTHE3/45 VISHAY

获取价格

DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
NSB8MTHE3/81 VISHAY

获取价格

DIODE 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3,
NSB8MTHE3_A/I VISHAY

获取价格

DIODE GEN PURP 1KV 8A TO263AB
NSB8MTHE3_A/P VISHAY

获取价格

DIODE GEN PURP 1KV 8A TO263AB
NSB9435T1 ONSEMI

获取价格

High Current Bias Resistor Transistor
NSB9435T1/D ONSEMI

获取价格

High Current Bias Resistor Transistor