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NRVB8H100MFSWFT3G PDF预览

NRVB8H100MFSWFT3G

更新时间： 2024-11-15 01:09:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 67K
描述
Switch Mode Power Rectifiers

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中文翻译

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NRVB8H100MFSWFT3G 数据手册

 浏览型号NRVB8H100MFSWFT3G的Datasheet PDF文件第2页浏览型号NRVB8H100MFSWFT3G的Datasheet PDF文件第3页浏览型号NRVB8H100MFSWFT3G的Datasheet PDF文件第4页 
MBR8H100MFS,  
NRVB8H100MFS  
Switch Mode  
Power Rectifiers  
Features  
• Low Power Loss / High Efficiency  
www.onsemi.com  
• New Package Provides Capability of Inspection and Probe After  
Board Mounting  
SCHOTTKY BARRIER  
RECTIFIERS  
• Guardring for Stress Protection  
• Low Forward Voltage Drop  
8 AMPERES  
100 VOLTS  
• 175°C Operating Junction Temperature  
• WF Suffix for Products with Wettable Flanks  
• NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
5,6  
1,2,3  
• These are Pb−Free Devices  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
• Case: Epoxy, Molded  
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
• Lead Finish: 100% Matte Sn (Tin)  
1
B8H100  
AYWZZ  
A
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Not Used  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
B8H100 = Specific Device Code  
• Device Meets MSL 1 Requirements  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
100  
8.0  
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
A
A
F(AV)  
†
Device  
Package Shipping  
(Rated V , T = 165°C)  
R
C
MBR8H100MFST1G  
SO−8 FL 1500 /  
Peak Repetitive Forward Current,  
I
16  
75  
FRM  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Rated V , Square Wave,  
R
20 kHz, T = 162°C)  
C
MBR8H100MFST3G  
NRVB8H100MFST1G  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
A
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
NRVB8H100MFSWFT1G SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
FSM  
NRVB8H100MFST3G  
Storage Temperature Range  
T
−65 to +175  
−55 to +175  
75  
°C  
°C  
mJ  
stg  
Operating Junction Temperature  
T
J
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
NRVB8H100MFSWFT3G SO−8 FL  
5000 /  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
(Pb−Free) Tape & Reel  
M4  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
NOTE: The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dPD/dTJ < 1/RJA  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
August, 2015 − Rev. 2  
MBR8H100MFS/D  
1234

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