NRVBAF260T3G

更新时间： 2024-11-02 11:01:31

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管
页数	文件大小	规格书
4页	110K
描述
60 V, 2.0 A Low VF Schottky Rectifier

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NRVBAF260T3G 数据手册

MBRAF260T3G

Surface Mount

Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes in surface mount

applications where compact size and weight are critical to the system.

http://onsemi.com

SCHOTTKY BARRIER

RECTIFIER

Features

• Low Profile Package for Space Constrained Applications

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• 150°C Operating Junction Temperature

• Guard−Ring for Stress Protection

2.0 AMPERE

60 VOLTS

• These are Pb−Free and Halide−Free Devices

Mechanical Charactersistics

• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0

• Weight: 95 mg (approximately)

SMA−FL

CASE 403AA

STYLE 6

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

MARKING DIAGRAM

• Cathode Polarity Band

• Device Meets MSL 1 Requirements

• ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B

AYWW

RAGG

RAG

= Specific Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

MBRAF260T3G

SMA−FL 5000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

July, 2012 − Rev. 0

MBRAF260/D

12 3 4

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