MBRAF3200T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
Features
• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very High Blocking Voltage − 200 V
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• This is a Pb−Free Device
3.0 AMPERE
200 VOLTS
SMA−FL
CASE 403AA
PLASTIC
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
STYLE 6
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
MARKING DIAGRAM
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
RACG
G
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
RAC
A
Y
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
WW
G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
200
V
RRM
RWM
(Note: Microdot may be in either location)
V
V
R
Average Rectified Forward Current
L
I
3.0
A
A
F(AV)
ORDERING INFORMATION
(T = 100°C)
†
Device
Package
Shipping
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
100
FSM
MBRAF3200T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
Operating Junction Temperature
T
−65 to +150
°C
J
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 0
MBRAF3200T3/D