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NRVBAF3200T3G PDF预览

NRVBAF3200T3G

更新时间: 2024-11-02 11:01:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 106K
描述
200 V, 3.0 A Schottky Rectifier

NRVBAF3200T3G 数据手册

 浏览型号NRVBAF3200T3G的Datasheet PDF文件第2页浏览型号NRVBAF3200T3G的Datasheet PDF文件第3页浏览型号NRVBAF3200T3G的Datasheet PDF文件第4页 
MBRAF3200T3G  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metaltosilicon power diode. Stateoftheart geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
Small Compact Surface Mountable Package with JBend Leads  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
Very High Blocking Voltage 200 V  
150°C Operating Junction Temperature  
GuardRing for Stress Protection  
This is a PbFree Device  
3.0 AMPERE  
200 VOLTS  
SMAFL  
CASE 403AA  
PLASTIC  
Mechanical Charactersistics  
Case: Epoxy, Molded, Epoxy Meets UL 94, V0  
Weight: 95 mg (approximately)  
STYLE 6  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
AYWW  
RACG  
G
Cathode Polarity Band  
Device Meets MSL 1 Requirements  
ESD Ratings: Machine Model = A  
ESD Ratings: Human Body Model = 1B  
RAC  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
WW  
G
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
200  
V
RRM  
RWM  
(Note: Microdot may be in either location)  
V
V
R
Average Rectified Forward Current  
L
I
3.0  
A
A
F(AV)  
ORDERING INFORMATION  
(T = 100°C)  
Device  
Package  
Shipping  
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
100  
FSM  
MBRAF3200T3G SMAFL 5000 / Tape & Reel  
(PbFree)  
Operating Junction Temperature  
T
65 to +150  
°C  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2012 Rev. 0  
MBRAF3200T3/D  

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