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NRVBA120ET3G PDF预览

NRVBA120ET3G

更新时间: 2024-11-15 11:01:31
品牌 Logo 应用领域
安森美 - ONSEMI 测试光电二极管整流二极管
页数 文件大小 规格书
4页 47K
描述
肖特基功率整流器,表面贴装,1.0 A,20 V

NRVBA120ET3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMA, 2 PINReach Compliance Code:not_compliant
Factory Lead Time:1 week风险等级:5.68
其他特性:FREE WHEELING DIODE , LOW LEAKAGE CURRENT应用:POWER
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.595 V
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:40 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE参考标准:AEC-Q101
最大重复峰值反向电压:20 V最大反向电流:10 µA
反向测试电压:20 V表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:J BEND端子位置:DUAL
Base Number Matches:1

NRVBA120ET3G 数据手册

 浏览型号NRVBA120ET3G的Datasheet PDF文件第2页浏览型号NRVBA120ET3G的Datasheet PDF文件第3页浏览型号NRVBA120ET3G的Datasheet PDF文件第4页 
MBRA120ET3  
Surface Mount  
Schottky Power Rectifier  
SMA Power Surface Mount Package  
. . . employing the Schottky Barrier principle in a metal−to−silicon  
power rectifier. Features epitaxial construction with oxide passivation  
and metal overlay contact. Ideally suited for low voltage, high  
frequency switching power supplies; free wheeling diodes and  
polarity protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Compact Package with J−Bend Leads Ideal for Automated Handling  
Highly Stable Oxide Passivated Junction  
Guardring for Over−Voltage Protection  
1 AMPERE  
20 VOLTS  
Optimized for Low Leakage Current  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
Case: Molded Epoxy  
Epoxy Meets UL94, V at 1/8  
O
Weight: 70 mg (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
B1E2  
SMA  
CASE 403D  
PLASTIC  
B1E2 = Device Code  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Polarity: Polarity Band Indicates Cathode Lead  
Available in 12 mm Tape, 5000 Units per 13 inch Reel  
Device Meets MSL1 Requirements  
ORDERING INFORMATION  
ESD Ratings: Machine Model, C (>400 V)  
Human Body Model, 3B (>8000 V)  
Marking: B1E2  
Device  
Package  
Shipping  
MBRA120ET3  
SMA  
5000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
20  
V
RRM  
RWM  
R
Average Rectified Forward Current  
I
1.0  
40  
A
A
O
(At Rated V , T = 125°C)  
R
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
FSM  
Storage Temperature  
T
−55 to +150  
−55 to +150  
10,000  
°C  
°C  
stg  
Operating Junction Temperature  
Voltage Rate of Change  
T
J
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
December, 2003 − Rev. 2  
MBRA120ET3/D  

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