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NRVBAF1540T3G PDF预览

NRVBAF1540T3G

更新时间: 2024-11-02 11:01:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 109K
描述
1.5 A, 40 V Schottky Rectifier

NRVBAF1540T3G 数据手册

 浏览型号NRVBAF1540T3G的Datasheet PDF文件第2页浏览型号NRVBAF1540T3G的Datasheet PDF文件第3页浏览型号NRVBAF1540T3G的Datasheet PDF文件第4页浏览型号NRVBAF1540T3G的Datasheet PDF文件第5页 
MBRAF1540T3G  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metaltosilicon power diode. Stateoftheart geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
Features  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Low Profile Package for Space Constrained Applications  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
150°C Operating Junction Temperature  
GuardRing for Stress Protection  
1.5 AMPERE  
40 VOLTS  
These are PbFree and HalideFree Devices  
Mechanical Charactersistics  
Case: Epoxy, Molded, Epoxy Meets UL 94, V0  
Weight: 95 mg (approximately)  
SMAFL  
CASE 403AA  
STYLE 6  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Cathode Polarity Band  
MARKING DIAGRAM  
Device Meets MSL 1 Requirements  
ESD Ratings: Machine Model = C  
ESD Ratings: Human Body Model = 3B  
AYWW  
RAEG  
G
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
40  
V
RRM  
RWM  
RAE  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= PbFree Package  
R
Average Rectified Forward Current  
I
O
1.5  
3.0  
A
A
WW  
G
(At Rated V , T = 100°C)  
R
C
(Note: Microdot may be in either location)  
Peak Repetitive Forward Current  
(At Rated V , Square Wave,  
I
FRM  
R
100 kHz, T = 130°C)  
C
ORDERING INFORMATION  
NonRepetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
40  
A
FSM  
Device  
Package  
Shipping  
MBRAF1540T3G SMAFL 5000 / Tape & Reel  
(PbFree)  
Storage/Operating Case Temperature  
Operating Junction Temperature  
T
, T  
55 to +150  
55 to +150  
10,000  
°C  
°C  
stg  
C
T
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Voltage Rate of Change  
dv/dt  
V/ms  
(Rated V , T = 25°C)  
R
J
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
July, 2012 Rev. 0  
MBRAF1540/D  

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