MBRAF1540T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
1.5 AMPERE
40 VOLTS
• These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
SMA−FL
CASE 403AA
STYLE 6
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
MARKING DIAGRAM
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
AYWW
RAEG
G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
40
V
RRM
RWM
RAE
A
Y
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
R
Average Rectified Forward Current
I
O
1.5
3.0
A
A
WW
G
(At Rated V , T = 100°C)
R
C
(Note: Microdot may be in either location)
Peak Repetitive Forward Current
(At Rated V , Square Wave,
I
FRM
R
100 kHz, T = 130°C)
C
ORDERING INFORMATION
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
40
A
FSM
†
Device
Package
Shipping
MBRAF1540T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
Storage/Operating Case Temperature
Operating Junction Temperature
T
, T
−55 to +150
−55 to +150
10,000
°C
°C
stg
C
T
J
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Voltage Rate of Change
dv/dt
V/ms
(Rated V , T = 25°C)
R
J
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 0
MBRAF1540/D