MBR5H100MFS,
NRVB5H100MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
http://onsemi.com
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
Board Mounting
• Guardring for Stress Protection
• Low Forward Voltage Drop
• 175°C Operating Junction Temperature
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free Devices
Mechanical Characteristics:
MARKING
DIAGRAM
• Case: Epoxy, Molded
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
1
B5H100
AYWZZ
A
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
Not Used
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
B5H100 = Specific Device Code
• Device Meets MSL 1 Requirements
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
V
RRM
RWM
100
5
R
ORDERING INFORMATION
Average Rectified Forward Current
I
A
A
F(AV)
Device
Package
Shipping†
1500 /
(Rated V , T = 150°C)
R
C
MBR5H100MFST1G
SO−8 FL
Peak Repetitive Forward Current,
(Rated V , Square Wave,
I
10
FRM
(Pb−Free) Tape & Reel
R
20 kHz, T = 150°C)
C
MBR5H100MFST3G
NRVB5H100MFST1G
SO−8 FL 5000 /
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
200
A
FSM
(Pb−Free) Tape & Reel
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
SO−8 FL 5000 /
(Pb−Free) Tape & Reel
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change
T
−65 to +175
−55 to +175
10,000
°C
°C
NRVB5H100MFST3G
stg
T
J
dv/dt
V/ms
†For information on tape and reel specifications,
including part orientation and tape sizes, please
(Rated V )
R
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
100
mJ
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
May, 2012 − Rev. 4
MBR5H100MFS/D