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NRVB5H100MFST1G PDF预览

NRVB5H100MFST1G

更新时间： 2024-09-23 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 开关
页数 文件大小 规格书
5页 105K
描述
SWITCHMODE Power Rectifiers

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NRVB5H100MFST1G 数据手册

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MBR5H100MFS,  
NRVB5H100MFS  
SWITCHMODE  
Power Rectifiers  
These state−of−the−art devices have the following features:  
Features  
http://onsemi.com  
• Low Power Loss / High Efficiency  
• New Package Provides Capability of Inspection and Probe After  
Board Mounting  
• Guardring for Stress Protection  
• Low Forward Voltage Drop  
• 175°C Operating Junction Temperature  
SCHOTTKY BARRIER  
RECTIFIERS  
5 AMPERES  
100 VOLTS  
• NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
5,6  
1,2,3  
• These are Pb−Free Devices  
Mechanical Characteristics:  
MARKING  
DIAGRAM  
• Case: Epoxy, Molded  
A
C
C
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.  
• Lead Finish: 100% Matte Sn (Tin)  
1
B5H100  
AYWZZ  
A
A
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Not Used  
• Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
B5H100 = Specific Device Code  
• Device Meets MSL 1 Requirements  
A
Y
W
ZZ  
= Assembly Location  
= Year  
= Work Week  
= Lot Traceability  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
V
RRM  
RWM  
100  
5
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
A
A
F(AV)  
Device  
Package  
Shipping†  
1500 /  
(Rated V , T = 150°C)  
R
C
MBR5H100MFST1G  
SO−8 FL  
Peak Repetitive Forward Current,  
(Rated V , Square Wave,  
I
10  
FRM  
(Pb−Free) Tape & Reel  
R
20 kHz, T = 150°C)  
C
MBR5H100MFST3G  
NRVB5H100MFST1G  
SO−8 FL 5000 /  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
200  
A
FSM  
(Pb−Free) Tape & Reel  
SO−8 FL 1500 /  
(Pb−Free) Tape & Reel  
SO−8 FL 5000 /  
(Pb−Free) Tape & Reel  
Storage Temperature Range  
Operating Junction Temperature  
Voltage Rate of Change  
T
−65 to +175  
−55 to +175  
10,000  
°C  
°C  
NRVB5H100MFST3G  
stg  
T
J
dv/dt  
V/ms  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
(Rated V )  
R
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
100  
mJ  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
May, 2012 − Rev. 4  
MBR5H100MFS/D  
12345

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NRVB5H100MFST1G 替代型号

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