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NESG3031M05-A PDF预览

NESG3031M05-A

更新时间: 2023-12-18 00:00:00
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
10页 182K
描述
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN

NESG3031M05-A 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-F4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.23
其他特性:LOW NOISE最大集电极电流 (IC):0.035 A
基于收集器的最大容量:0.25 pF集电极-发射极最大电压:4.3 V
配置:SINGLE最高频带:C BAND
JESD-30 代码:R-PDSO-F4JESD-609代码:e6
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON GERMANIUMBase Number Matches:1

NESG3031M05-A 数据手册

 浏览型号NESG3031M05-A的Datasheet PDF文件第4页浏览型号NESG3031M05-A的Datasheet PDF文件第5页浏览型号NESG3031M05-A的Datasheet PDF文件第6页浏览型号NESG3031M05-A的Datasheet PDF文件第7页浏览型号NESG3031M05-A的Datasheet PDF文件第9页浏览型号NESG3031M05-A的Datasheet PDF文件第10页 
NESG3031M05  
<R>  
S-PARAMETERS  
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import  
of the parameters to microwave circuit simulators without the need for keyboard inputs.  
Click here to download S-parameters.  
[RF and Microwave] [Device Parameters]  
URL http://www.necel.com/microwave/en/  
8
Data Sheet PU10414EJ04V0DS  

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