Datasheet > NESG3031M05

NESG3031M05

更新时间： 2024-02-09 16:29:24

品牌	Logo	应用领域
CEL		晶体晶体管
页数	文件大小	规格书
9页	309K
描述
NPN SILICON GERMANIUM RF TRANSISTOR

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NESG3031M05 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	SUPER MINIMOLD PACKAGE-4	Reach Compliance Code：	compliant
风险等级：	5.61	最大集电极电流 (IC)：	0.035 A
基于收集器的最大容量：	0.25 pF	集电极-发射极最大电压：	4.3 V
配置：	SINGLE	最高频带：	C BAND
JESD-30 代码：	R-PDSO-F4	JESD-609代码：	e6
湿度敏感等级：	1	元件数量：	1
端子数量：	4	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN BISMUTH	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	10
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON GERMANIUM
Base Number Matches：	1

NESG3031M05 数据手册

4590 Patrick Henry Drive

Santa Clara, CA 95054-1817

Telephone: (408) 919-2500

Facsimile: (408) 988-0279

Subject: Compliance with EU Directives

CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant

with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous

Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive

2003/11/EC Restriction on Penta and Octa BDE.

CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates

that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are

exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.

All devices with these suffixes meet the requirements of the RoHS directive.

This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that

go into its products as of the date of disclosure of this information.

Restricted Substance

per RoHS

Concentration Limit per RoHS

(values are not yet fixed)

Concentration contained

in CEL devices

-A

-AZ

(*)

Lead (Pb)

Mercury

< 1000 PPM

< 100 PPM

< 1000 PPM

Not Detected

Cadmium

Hexavalent Chromium

PBB

Not Detected

PBDE

If you should have any additional questions regarding our devices and compliance to environmental

standards, please do not hesitate to contact your local representative.

Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance

content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information

provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better

integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate

information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL

suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for

release.

In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to

customer on an annual basis.

See CEL Terms and Conditions for additional clarification of warranties and liability.

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与NESG3031M05相关器件

型号	品牌	描述	获取价格	数据表
NESG3031M05-A	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格
NESG3031M05-A-FB	RENESAS	C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, SUPER MINIMOLD, M05, 4 PIN	获取价格
NESG3031M05-FB	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格
NESG3031M05-FB-A	NEC	RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, C Band, Silicon Germanium, NPN	获取价格
NESG3031M05-T1	NEC	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR	获取价格
NESG3031M05-T1	CEL	NPN SILICON GERMANIUM RF TRANSISTOR	获取价格

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