NESG260234-AZ-FB

更新时间： 2024-01-26 07:02:58

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
4页	254K
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数据手册

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NESG260234-AZ-FB 数据手册

NEC's NPN SiGe RF TRANSISTOR

FOR MEDIUM OUTPUT POWER

AMPLIFICATION (1 W)

NESG260234

3-PIN POWER MINIMOLD (34 PACKAGE)

FEATURES

•

THIS PRODUCT IS SUITABLE FOR

MEDIUM OUTPUT POWER (1 W) AMPLIFICATION

PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz

PO = 30 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 900 MHz

•

MAXIMUM STABLE GAIN:

MSG= 23 dB TYP @ VCE = 6 V, IC = 100 mA, f = 460 MHz

SiGe TECHNOLOGY:

UHS2-HV process

ABSOLUTE MAXIMUM RATINGS:

VCBO = 25 V

3-PIN POWER MINIMOLD (34 PACKAGE)

ORDERING INFORMATION

PART NUMBER

ORDER NUMBER

PACKAGE

QUANTITY

SUPPLYING FORM

NESG260234

NESG260234-AZ

3-pin power minimold 25 pcs (Non reel) • Magazine case

(Pb-Free)^Note1

NESG260234-T1 NESG260234-T1-AZ

1 kpcs/reel

• 12 mm wide embossed taping

• Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains Lead in the part except the electrode terminals.

Remark To order evaluation samples, contact your nearby sales ofﬁce.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATINGS

UNIT

9.2

2.8

600

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

1.9

150

Tstg

−65 to +150

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

California Eastern Laboratories

12 3 4

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