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NESG260234-AZ-FB PDF预览

NESG260234-AZ-FB

更新时间: 2024-01-06 21:22:45
品牌 Logo 应用领域
日电电子 - NEC 晶体晶体管放大器
页数 文件大小 规格书
4页 254K
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NESG260234-AZ-FB 数据手册

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NESG260234  
ELECTRICAL CHARACHTERISTICS (TA = 25°C)  
PARAMETER  
DC Characteristics  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
ICBO  
IEBO  
VCB = 9.2 V, IE = 0 mA  
1
1
μA  
μA  
VEB = 1.0 V, IC = 0 mA  
VCE = 3 V, IC = 100 mA  
Note  
hFE  
80  
120  
180  
RF Characteristics  
GL  
GL  
Po  
Po  
ηc  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 460 MHz, Pin = 0 dBm  
19  
22  
19  
dB  
dB  
Linear gain (1)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 900 MHz, Pin = 0 dBm  
Linear gain (2)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 460 MHz, Pin = 15 dBm  
28.5  
30.0  
30.0  
50  
dBm  
dBm  
%
Output Power (1)  
Output Power (2)  
Collector Efficiency (1)  
Collector Efficiency (2)  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 900 MHz, Pin = 20 dBm  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 460 MHz, Pin = 15 dBm  
VCE = 6 V, IC (set) = 30 mA (RF OFF),  
f = 900 MHz, Pin = 20 dBm  
ηc  
60  
%
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%  
hFE CLASSIFICATION  
RANK  
Marking  
hFE Value  
FB  
SP  
80 to 180  

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