Datasheet > NESG250134-T1-AZ

NESG250134-T1-AZ

更新时间： 2024-01-18 03:17:57

品牌	Logo	应用领域
CEL		晶体晶体管输出元件 ISM频段放大器
页数	文件大小	规格书
13页	709K
描述
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE)

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技术参数
数据手册

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NESG250134-T1-AZ 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.09
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	9.2 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	10000 MHz
Base Number Matches：	1

NESG250134-T1-AZ 数据手册

NESG250134

ELECTRICAL CHARACHTERISTICS (TA = 25°C)

PARAMETER

DC Characteristics

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

−

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 5 V, IE = 0 mA

μA

−

VEB = 0.5 V, IC = 0 mA

VCE = 3 V, IC = 100 mA

Note 1

hFE

120

180

RF Characteristics

Gain Bandwidth Product

Insertion Power Gain

Maximum Stable Gain

−

VCE = 3.6 V, IC = 100 mA, f = 460 MHz

GHz

|S21e

MSG^{Note 2}VCE = 3.6 V, IC = 100 mA, f = 460 MHz

VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

−

Linear gain (1)

−

f = 460 MHz, Pin = 0 dBm

VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

Linear gain (2)

f = 900 MHz, Pin = 0 dBm

VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

Output Power (1)

Output Power (2)

Collector Efﬁciency (1)

Collector Efﬁciency (2)

−

dBm

f = 460 MHz, Pin = 15 dBm

VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

f = 900 MHz, Pin = 20 dBm

VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

ηc

−

f = 460 MHz, Pin = 15 dBm

VCE = 3.6 V, IC (set) = 30 mA (RF OFF),

ηc

−

f = 900 MHz, Pin = 20 dBm

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

S21

S12

2. MSG =

hFE CLASSIFICATION

RANK

Marking

hFE Value

80 to 180

1 234 5 6 7...13

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