Datasheet > NESG250134-T1

NESG250134-T1

更新时间： 2024-02-12 11:51:24

品牌	Logo	应用领域
日电电子 - NEC		放大器晶体管
页数	文件大小	规格书
14页	154K
描述
RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silicon Germanium, NPN, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

NESG250134-T1 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.09
最大集电极电流 (IC)：	0.5 A	集电极-发射极最大电压：	9.2 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PSSO-F3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON GERMANIUM	标称过渡频率 (fT)：	10000 MHz
Base Number Matches：	1

NESG250134-T1 数据手册

DATA SHEET

NPN SILICON GERMANIUM RF TRANSISTOR

NESG250134

NPN SiGe RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (800 mW)

3-PIN POWER MINIMOLD (34 PKG)

FEATURES

• This product is suitable for medium output power (800 mW) amplification

P^O= 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz

P^O= 29 dBm TYP. @ VCE = 3.6 V, Pin = 20 dBm, f = 900 MHz

•

MSG (Maximum Stable Gain) = 23 dB TYP., @ V^CE= 3.6 V, Ic = 100 mA, f = 460 MHz

Using UHS2-HV process (SiGe technology), V^CBO(ABSOLUTE MAXIMUM RATINGS) = 20 V

3-pin power minimold (34 PKG)

ORDERING INFORMATION

Part Number

NESG250134

Order Number

Package

Quantity

Supplying Form

NESG250134-AZ

3-pin power minimold 25 pcs

(Pb-Free)^{Note1, 2}

(Non reel)

• Magazine case

NESG250134-T1 NESG250134-T1-AZ

1 kpcs/reel • 12 mm wide embossed taping

• Pin 2 (Emitter) face the perforation side of the tape

Notes 1. Contains lead in the part except the electrode terminals.

2. With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact

your nearby sales office.

Remark To order evaluation samples, contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

9.2

2.8

500

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

1.9

150

°C

Tstg

−65 to +150

Note Mounted on 34.2 cm²× 0.8 mm (t) glass epoxy PWB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10422EJ03V0DS (3rd edition)

Date Published October 2004 CP(K)

Printed in Japan

The mark shows major revised points.



NEC Compound Semiconductor Devices, Ltd. 2003, 2004

12 3 4 5 6 7...14

下载PDF

与NESG250134-T1相关器件

型号	品牌	描述	获取价格	数据表
NESG250134-T1-AZ	CEL	NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIM	获取价格
NESG250134-T1-AZ	RENESAS	NESG250134-T1-AZ	获取价格
NESG250134-T1-AZ	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG250134-T1-AZFB	RENESAS	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, LEAD FREE, POWER, MINIMOLD, 34, 3 PIN	获取价格
NESG250134-T1-AZ-FB	NEC	RF Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
NESG250134-T1FB	NEC	UHF BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, MINIMOLD PACKAGE-3	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

NESG250134-T1

NESG250134-T1 技术参数

NESG250134-T1 数据手册

与NESG250134-T1相关器件

与NESG250134-T1相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NESG250134-T1

NESG250134-T1 技术参数

NESG250134-T1 数据手册

与NESG250134-T1相关器件

与NESG250134-T1相关文章

您还可以找

您在本页遇到什么问题？