NE71300N

更新时间： 2024-11-22 21:54:55

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管放大器
页数	文件大小	规格书
8页	94K
描述
LOW NOISE L TO K-BAND GaAs MESFET

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技术参数
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NE71300N 技术参数

生命周期：	Obsolete	包装说明：	DIE-6
Reach Compliance Code：	unknown	风险等级：	5.68
Is Samacsys：	N	其他特性：	LOW NOISE, HIGH RELIABILITY
配置：	SINGLE	最小漏源击穿电压：	5 V
FET 技术：	METAL SEMICONDUCTOR	最高频带：	K BAND
JESD-30 代码：	R-XUUC-N3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	UNCASED CHIP	极性/信道类型：	N-CHANNEL
最小功率增益 (Gp)：	8.5 dB	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管应用：	AMPLIFIER
晶体管元件材料：	GALLIUM ARSENIDE	Base Number Matches：	1

NE71300N 数据手册

LOW NOISE

L TO K-BAND GaAs MESFET

NE71300

NOISE FIGURE & ASSOCIATED GAIN

FEATURES

vs. FREQUENCY

VDS = 3 V, IDS = 10 mA

•

LOW NOISE FIGURE

2.5

NF = 1.6 dB TYP at f = 12 GHz

•

HIGH ASSOCIATED GAIN

GA = 9.5 dB TYP at f = 12 GHz

•

LG = 0.3 µm, WG = 280 µm

EPITAXIAL TECHNOLOGY

LOW PHASE NOISE

1.5

0.5

DESCRIPTION

The NE71300 features a low noise figure and high associ-

atedgainthroughK-bandbyemployingarecessed0.3micron

gate and triple epitaxial technology. The active area of the

chip is covered with Si02 and Si3N4 for scratch protection as

well as surface stability. This device is suitable for both

amplifier and oscillator applications in the consumer and

industrial markets.

20 30

Frequency, f (GHz)

NEC's stringent quality assurance and test procedures en-

sure the highest reliability and performance.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

NE71300

PACKAGE OUTLINE

00 (CHIP)

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

NFOPT

Optimum Noise Figure, VDS = 3 V, IDS = 10 mA,

f = 4 GHz

f = 12 GHz

0.6

1.6

0.7

1.8

Associated Gain, VDS = 3 V, IDS = 10 mA,

f = 4 GHz

f = 12 GHz

11.5

8.5

14.0

9.5

P1dB

Output Power at 1 dB Compression, VDS = 3 V, IDs = 30 mA,

f =12 GHz

dBm

14.5

IDSS

Saturated Drain Current, VDS = 3 V, VGS = 0

Pinch-Off Voltage, VDS = 3 V, IDS = 0.1 mA

Transconductance, VDS = 3 V, IDS = 10 mA

Gate to Source Leakage Current at VGS = -5 V

Thermal Resistance (Channel to Case)

-3.5

-1.1

120

-0.5

µA

IGSO

1.0

RTH (CH-C)

°C/W

190

Notes:

1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10

samples.

2. Chip mounted on infinite heat sink.

California Eastern Laboratories

12 3 4 5 6 7 8

中文翻译

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与NE71300N相关器件

型号	品牌	获取价格	描述	数据表
NE71300-N	NEC	获取价格	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71383B	NEC	获取价格	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE720	DBLECTRO	获取价格	Magnet latching relay.
NE720_05	DBLECTRO	获取价格	High sensitivity & reliability.
NE72000	RENESAS	获取价格	RF SMALL SIGNAL, FET
NE72000	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE72000L	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE72000M	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE72000N	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M
NE72000P	CEL	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, M

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