是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SOT-143, 4 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.87 | Is Samacsys: | N |
其他特性: | LOW NOISE | 外壳连接: | SOURCE |
配置: | SINGLE | 最小漏源击穿电压: | 13 V |
FET 技术: | METAL SEMICONDUCTOR | 最大反馈电容 (Crss): | 0.03 pF |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 16 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE25139-T1 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139T1U71 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139T1U72 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139T1U73 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139T1U74 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
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NE25139T2U71 | CEL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
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